English

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

• Ting Cheng ^{1, 2, †,} ,
• Luzhao Sun ^{1, 2, †,} ,
• Zhirong Liu ^1, ,
• Feng Ding ^{3, 4, ,} ,
• Zhongfan Liu ^{1, 2, ,}

• 1.

  Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Academy for Advanced Interdisciplinary Studies, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

• 2.

  Beijing Graphene Institute (BGI), Beijing 100095, China

• 3.

  Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea

• 4.

  School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea

Corresponding author: Feng Ding, Email: f.ding@unist.ac.kr; Zhongfan Liu, Email: zfliu@pku.edu.cn

• Received Date: 02 December 2020
  Accepted Date: 25 December 2020
  Revised Date: 24 December 2020
  Available Online: 15 January 2022
• Fund Project:

  the National Key R & D Program of China 

  the National Natural Science Foundation of China 

  the Beijing National Laboratory for Molecular Sciences, China 

  the Beijing Municipal Science & Technology Commission, China 

  the Beijing Municipal Science & Technology Commission, China 

  the Beijing Municipal Science & Technology Commission, China 

• ^†These authors contributed equally to this work.

Abstract: Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH₄, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and on-terrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Key words:
• Graphene
•  /  Chemical vapor deposition
•  /  Epitaxy
•  /  Catalysis
•  /  First-principle calculations

• 1. [1]

     Chen, J. -H.; Jang, C.; Xiao, S. D.; Ishigami, M.; Fuhrer, M. S. Nat. Nanotechnol. 2008, 3, 206. doi: 10.1038/nnano.2008.58

  2. [2]

     Balandin, A. A.; Ghosh, S.; Bao, W. Z.; Calizo, I.; Teweldebrhan, D.; Miao, F.; Lau, C. N. Nano Lett. 2008, 8, 902. doi: 10.1021/nl0731872

  3. [3]

     Cheng, T.; Lang, H. F.; Li, Z. Z.; Liu, Z. F.; Liu, Z. R. Phys. Chem. Chem. Phys. 2017, 19, 23942. doi: 10.1039/c7cp03736h

  4. [4]

     Lin, L.; Deng, B.; Sun, J. Y.; Peng, H.; Liu, Z. Chem. Rev. 2018, 118, 9281. doi: 10.1021/acs.chemrev.8b00325

  5. [5]

     Nair, R. R.; Blake, P.; Grigorenko, A. N.; Novoselov, K. S.; Booth, T. J.; Stauber, T.; Peres, N. M. R.; Geim, A. K. Science 2008, 320, 1308. doi: 10.1126/science.1156965

  6. [6]

     Lee, C.; Wei, X. D.; Kysar, J. W.; Hone, J. Science 2008, 321, 385. doi: 10.1126/science.1157996

  7. [7]

     Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J. -H.; Kim, P.; Choi, J. -Y.; Hong, B. H. Nature 2009, 457, 706. doi: 10.1038/nature07719

  8. [8]

     Novoselov, K. S.; Falko, V. I.; Colombo, L.; Gellert, P. R.; Schwab, M. G.; Kim, K. Nature 2012, 490, 192. doi: 10.1038/nature11458

  9. [9]

     陈旭东, 陈召龙, 孙靖宇, 张艳锋, 刘忠范. 物理化学学报, 2016, 32, 14. doi: 10.3866/PKU.WHXB201511133Chen, X. D.; Chen, Z. L.; Sun, J. Y.; Zhang, Y. F.; Liu, Z. F. Acta Phys. -Chim. Sin. 2016, 32, 14. doi: 10.3866/PKU.WHXB201511133

  10. [10]

      陈召龙, 高鹏, 刘忠范. 物理化学学报, 2020, 36, 1907004. doi: 10.3866/PKU.WHXB201907004Chen, Z. L.; Gao, P.; Liu, Z. F. Acta Phys. -Chim. Sin. 2020, 36, 1907004. doi: 10.3866/PKU.WHXB201907004

  11. [11]

      Deng, B.; Liu, Z.; Peng, H. Adv. Mater. 2019, 31, e1800996. doi: 10.1002/adma.201800996

  12. [12]

      Jia, K. C.; Zhang, J. C.; Lin, L.; Li, Z.; Gao, J.; Sun, L.; Xue, R.; Li, J.; Kang, N.; Luo, Z.; et al. J. Am. Chem. Soc. 2019, 141, 7670. doi: 10.1021/jacs.9b02068

  13. [13]

      Lin, L.; Zhang, J. C.; Su, H. S.; Li, J. Y.; Sun, L. Z.; Wang, Z. H.; Xu, F.; Liu, C.; Lopatin, S.; Zhu, Y. H.; et al. Nat. Commun. 2019, 10, 1912. doi: 10.1038/s41467-019-09565-4

  14. [14]

      Sun, L. Z.; Lin, L.; Wang, Z. H.; Rui, D.; Yu, Z.; Zhang, J.; Li, Y.; Liu, X.; Jia, K.; Wang, K.; et al. Adv. Mater. 2019, 31, 1902978. doi: 10.1002/adma.201902978

  15. [15]

      Zhang, J. C.; Jia, K. C.; Lin, L.; Zhao, W.; Huy Ta, Q.; Sun, L.; Li, T.; Li, Z.; Liu, X.; Zheng, L.; et al. Angew. Chem. Int. Ed. 2019, 58, 14446. doi: 10.1002/anie.201905672

  16. [16]

      Jia, K. C.; Ci, H. N.; Zhang, J. C.; Sun, Z.; Ma, Z.; Zhu, Y.; Liu, S.; Liu, J.; Sun, L.; Liu, X.; et al. Angew. Chem. Int. Ed. 2020, 59, 17214. doi: 10.1002/anie.202005406

  17. [17]

      Jacobberger, R. M.; Arnold, M. S. Chem. Mater. 2013, 25, 871. doi: 10.1021/cm303445s

  18. [18]

      Meng, L.; Wu, R. T.; Zhang, L. Z.; Li, L. F.; Du, S. X.; Wang, Y. L.; Gao, H. -J. J. Phys. : Condens. Matter 2012, 24, 314214. doi: 10.1088/0953-8984/24/31/314214

  19. [19]

      张艳锋, 高腾, 张玉, 刘忠范. 物理化学学报, 2012, 28, 2456. doi: 10.3866/PKU.WHXB201209062Zhang, Y. F.; Gao, T.; Zhang, Y.; Liu, Z. F. Acta Phys. -Chim. Sin. 2012, 28, 2456. doi: 10.3866/PKU.WHXB201209062

  20. [20]

      Dai, B. Y.; Fu, L.; Zou, Z. Y.; Wang, M.; Xu, H. T.; Wang, S.; Liu, Z. F. Nat. Commun. 2011, 2, 522. doi: 10.1038/ncomms1539

  21. [21]

      Ma, T.; Ren, W. C.; Zhang, X. Y.; Liu, Z.; Gao, Y.; Yin, L. -C.; Ma, X. -L.; Ding, F.; Cheng, H. -M. Proc. Natl. Acad. Sci. U.S.A. 2013, 110, 20386. doi: 10.1073/pnas.1312802110

  22. [22]

      Xu, X. Z.; Zhang, Z. H.; Dong, J. C.; Yi, D.; Niu, J.; Wu, M.; Lin, L.; Yin, R.; Li, M.; Zhou, J.; et al. Sci. Bull. 2017, 62, 1074. doi: 10.1016/j.scib.2017.07.005

  23. [23]

      Deng, B.; Xin, Z. W.; Xue, R. W.; Zhang, S. Q.; Xu, X. Z.; Gao, J.; Tang, J. L.; Qi, Y.; Wang, Y. N.; Zhao, Y.; et al. Sci. Bull. 2019, 64, 659. doi: 10.1016/j.scib.2019.04.030

  24. [24]

      Liu, N.; Fu, L.; Dai, B.; Yan, K.; Liu, X.; Zhao, R.; Zhang, Y.; Liu, Z. Nano Lett. 2011, 11, 297. doi: 10.1021/nl103962a

  25. [25]

      Ma, W.; Chen, M. -L.; Yin, L.; Liu, Z.; Li, H.; Xu, C.; Xin, X.; Sun, D. -M.; Cheng, H. -M.; Ren, W. Nat. Commun. 2019, 10, 2809. doi: 10.1038/s41467-019-10691-2

  26. [26]

      Huang, M.; Bakharev, P. V.; Wang, Z. -J.; Biswal, M.; Yang, Z.; Jin, S.; Wang, B.; Park, H. J.; Li, Y.; Qu, D.; et al. Nat. Nanotechnol. 2020, 15, 289. doi: 10.1038/s41565-019-0622-8

  27. [27]

      Van Luan, N.; Dinh Loc, D.; Lee, S. H.; Avila, J.; Han, G.; Kim, Y. -M.; Asensio, M. C.; Jeong, S. -Y.; Lee, Y. H. Nat. Nanotechnol. 2020, 15, 861. doi: 10.1038/s41565-020-0743-0

  28. [28]

      Zhang, J. C.; Sun, L. Z.; Jia, K. C.; Liu, X. T.; Cheng, T.; Peng, H.; Lin, L.; Liu, Z. ACS Nano 2020, 14, 10796. doi: 10.1021/acsnano.0c06141

  29. [29]

      Mattevi, C.; Kim, H.; Chhowalla, M. J. Mater. Chem. 2011, 21, 3324. doi: 10.1039/c0jm02126a

  30. [30]

      Earnshaw, A.; Harrington, T. J. Inorganic Chemistry of the Transition Elements, 6th ed.; Oxford University Press: Oxford, UK, 1972; pp. 210–394.

  31. [31]

      Qi, Y.; Meng, C. X.; Xu, X. Z.; Deng, B.; Han, N.; Liu, M.; Hong, M.; Ning, Y.; Liu, K.; Zhao, J.; et al. J. Am. Chem. Soc. 2017, 139, 17574. doi: 10.1021/jacs.7b09755

  32. [32]

      Li, X. S.; Cai, W. W.; Colombo, L.; Ruoff, R. S. Nano Lett. 2009, 9, 4268. doi: 10.1021/nl902515k

  33. [33]

      Reina, A.; Thiele, S.; Jia, X. T.; Bhaviripudi, S.; Dresselhaus, M. S.; Schaefer, J. A.; Kong, J. Nano Res. 2009, 2, 509. doi: 10.1007/s12274-009-9059-y

  34. [34]

      Geng, D. C.; Wu, B.; Guo, Y. L.; Huang, L. P.; Xue, Y. Z.; Chen, J. Y.; Yu, G.; Jiang, L.; Hu, W. P.; Liu, Y. Q. Proc. Natl. Acad. Sci. U.S.A. 2012, 109, 7992. doi: 10.1073/pnas.1200339109

  35. [35]

      Li, Y.; Sun, L.; Liu, H.; Wang, Y.; Liu, Z. Inorg. Chem. Front. 2021, 8, 182. doi: 10.1039/D0QI00923G

  36. [36]

      Zhao, C.; Liu, F. N.; Kong, X.; Yan, T.; Ding, F. Int. J. Smart Nano Mater. 2020, 11, 277. doi: 10.1080/19475411.2020.1820621

  37. [37]

      Zhang, J. C.; Lin, L.; Jia, K. C.; Sun, L. Z.; Peng, H. L.; Liu, Z. F. Adv. Mater. 2020, 32, 1903266. doi: 10.1002/adma.201903266

  38. [38]

      Cheng, H. M. Nat. Nanotechnol. 2014, 9, 726. doi: 10.1038/nnano.2014.229

  39. [39]

      王可心, 史刘嵘, 王铭展, 杨皓, 刘忠范, 彭海琳. 物理化学学报, 2019, 35, 1112. doi: 10.3866/PKU.WHXB201805032Wang, K. X.; Shi, L. R.; Wang, M. Z.; Yang, H.; Liu, Z. F.; Peng, H. L. Acta Phys. -Chim. Sin. 2019, 35, 1112. doi: 10.3866/PKU.WHXB201805032

  40. [40]

      Xie, Y. D.; Cheng, T.; Liu, C.; Chen, Y.; Chen, Z. L.; Qiu, L.; Cui, G.; Yu, Y.; Cui, L. Z.; Zhang, M. T.; et al. ACS Nano 2019, 13, 10272. doi: 10.1021/acsnano.9b03596

  41. [41]

      Chen, Z. L.; Chang, H. L.; Cheng, T.; Wei, T.; Wang, R.; Yang, S.; Dou, Z.; Liu, B.; Zhang, S.; Xie, Y.; et al. Adv. Funct. Mater. 2020, 30, 2001483. doi: 10.1002/adfm.202001483

  42. [42]

      程熠, 王坤, 亓月, 刘忠范. 物理化学学报, 2021, 37, 2006046. doi: 10.3866/PKU.WHXB202006046Cheng, Y.; Wang, K.; Qi, Y.; Liu, Z. F. Acta Phys. -Chim. Sin. 2021, 37, 2006046. doi: 10.3866/PKU.WHXB202006046

  43. [43]

      Zhang, W.; Wu, P.; Li, Z.; Yang, J. J. Phys. Chem. C 2011, 115, 17782. doi: 10.1021/jp2006827

  44. [44]

      王璐, 高峻峰, 丁峰. 化学学报, 2014, 72, 345. doi: 10.6023/a13090984Wang, L.; Gao, J. F.; Ding, F. Acta Chim. Sin. 2014, 72, 345. doi: 10.6023/a13090984

  45. [45]

      Wu, P.; Zhang, W.; Li, Z.; Yang, J. Small 2014, 10, 2136. doi: 10.1002/smll.201303680

  46. [46]

      Li, P.; Li, Z.; Yang, J. J. Phys. Chem. C 2017, 121, 25949. doi: 0.1021/acs.jpcc.7b09622

  47. [47]

      Qiu, Z.; Li, P.; Li, Z.; Yang, J. Acc. Chem. Res. 2018, 51, 728. doi: 10.1021/acs.accounts.7b00592

  48. [48]

      Dong, J. C.; Zhang, L. N.; Ding, F. Adv. Mater. 2019, 31, 1801583. doi: 10.1002/adma.201801583

  49. [49]

      Cheng, T.; Tan, C. W.; Zhang, S. Q.; Tu, T.; Peng, H.; Liu, Z. J. Phys. Chem. C 2018, 122, 19970. doi: 10.1021/acs.jpcc.8b05475

  50. [50]

      Cheng, T.; Liu, Z. F.; Liu, Z. R. J. Mater. Chem. C 2020, 8, 13819. doi: 10.1039/d0tc03253k

  51. [51]

      Yuan, S.; Meng, L.; Wang, J. J. Phys. Chem. C 2013, 117, 14796. doi: 10.1021/jp400944c

  52. [52]

      Wu, T. R.; Zhang, X. F.; Yuan, Q. H.; Xue, J. C.; Liu, Z. H.; Wang, H. S.; Wang, H. M.; Ding, F.; Yu, Q. K.; Xie, X. M.; et al. Nat. Mater. 2016, 15, 43. doi: 10.1038/nmat4477

  53. [53]

      Wang, X. L.; Yuan, Q. L.; Li, J.; Ding, F. Nanoscale 2017, 9, 11584. doi: 10.1039/c7nr02743e

  54. [54]

      Shu, H. B.; Tao, X. -M.; Ding, F. Nanoscale 2015, 7, 1627. doi: 10.1039/c4nr05590j

  55. [55]

      Wu, P.; Zhang, Y.; Cui, P.; Li, Z. Y.; Yang, J. L.; Zhang, Z. Y. Phys. Rev. Lett. 2015, 114, 216102. doi: 10.1103/PhysRevLett.114.216102

  56. [56]

      Gao, J.; Yip, J.; Zhao, J.; Yakobson, B. I.; Ding, F. J. Am. Chem. Soc. 2011, 133, 5009. doi: 10.1021/ja110927p

  57. [57]

      Xu, Z. W.; Yan, T. Y.; Liu, G. W.; Qiao, G.; Ding, F. Nanoscale 2016, 8, 921. doi: 10.1039/c5nr06016h

  58. [58]

      Sun, L.; Lin, L.; Zhang, J.; Wang, H.; Peng, H.; Liu, Z. Nano Res. 2017, 10, 355. doi: 10.1007/s12274-016-1297-1

  59. [59]

      Liu, Y.; Wu, T.; Yin, Y.; Zhang, X.; Yu, Q.; Searles, D. J.; Ding, F.; Yuan, Q.; Xie, X. Adv. Sci. 2018, 5, 1700961. doi: 10.1002/advs.201700961

  60. [60]

      Zhang, X. Y.; Xu, Z. W.; Hui, L.; Xin, J.; Ding, F. J. Phys. Chem. Lett. 2012, 3, 2822. doi: 10.1021/jz301029g

  61. [61]

      Yuan, Q. H.; Yakobson, B. I.; Ding, F. J. Phys. Chem. Lett. 2014, 5, 3093. doi: 10.1021/jz5015899

  62. [62]

      Xu, Z. W.; Zhao, G. H.; Qiu, L.; Zhang, X. Y.; Ding, F. NPJ Comput. Mater. 2020, 6, 14. doi: 10.1038/s41524-020-0281-1

  63. [63]

      Li, Y.; Sun, L. Z.; Chang, Z. H.; Liu, H. Y.; Wang, Y. C.; Liang, Y.; Chen, B. H.; Ding, Q. J.; Zhao, Z. Y.; Wang, R. Y.; et al. Adv. Mater. 2020, 32, 2002034. doi: 10.1002/adma.202002034

  64. [64]

      Wu, M. H.; Zhang, Z. B.; Xu, X. Z.; Zhang, Z. H.; Dong, J. C.; Qiao, R. X.; You, S. F.; Wang, L.; Qi, J. J.; Zou, D. X.; et al. Nature 2020, 581, 406. doi: 10.1038/s41586-020-2298-5

  65. [65]

      Yang, P.; Zhang, S.; Pan, S.; Tang, B.; Liang, Y.; Zhao, X.; Zhang, Z.; Shi, J.; Huan, Y.; Shi, Y.; et al. ACS Nano 2020, 14, 5036. doi: 10.1021/acsnano.0c01478

  66. [66]

      Shu, H. B.; Chen, X. S.; Tao, X. M.; Ding, F. ACS Nano 2012, 6, 3243. doi: 10.1021/nn300726r

  67. [67]

      Li, P.; Li, Z.; Yang, J. J. Phys. Chem. C 2017, 121, 25949. doi: 10.1021/acs.jpcc.7b09622

  68. [68]

      Wu, P.; Jiang, H.; Zhang, W.; Li, Z.; Hou, Z.; Yang, J. J. Am. Chem. Soc. 2012, 134, 6045. doi: 10.1021/ja301791x

  69. [69]

      Yazyev, O. V.; Chen, Y. P. Nat. Nanotechnol. 2014, 9, 755. doi: 10.1038/nnano.2014.166

  70. [70]

      Meng, L. J.; Jiang, J.; Wang, J. L.; Ding, F. J. Phys. Chem. C 2013, 118, 720. doi: 10.1021/jp409471a

  71. [71]

      Wang, L.; Zhang, X. Y.; Chan, H. L. W.; Yan, F.; Ding, F. J. Am. Chem. Soc. 2013, 135, 4476. doi: 10.1021/ja312687a

  72. [72]

      Yuan, Q.; Song, G.; Sun, D.; Ding, F. Sci. Rep. 2014, 4, 6541. doi: 10.1038/srep06541

  73. [73]

      Dong, J.; Zhang, L.; Dai, X.; Ding, F. Nat. Commun. 2020, 11, 5862. doi: 10.1038/s41467-020-19752-3

  74. [74]

      Artyukhov, V. I.; Hao, Y. F.; Ruoff, R. S.; Yakobson, B. I. Phys. Rev. Lett. 2015, 114, 115502. doi: 0.1103/PhysRevLett.114.115502

  75. [75]

      Wang, C.; Liu, Y.; Li, L.; Tan, H. Nanoscale 2014, 6, 5703. doi: 10.1039/c4nr00423j

  76. [76]

      Bronsgeest, M. S.; Bendiab, N.; Mathur, S.; Kimouche, A.; Johnson, H. T.; Coraux, J.; Pochet, P. Nano Lett. 2015, 15, 5098. doi: 10.1021/acs.nanolett.5b01246

  77. [77]

      de Lima, A. L.; Mussnich, L. A.; Manhabosco, T. M.; Chacham, H.; Batista, R. J.; de Oliveira, A. B. Nanotechnology 2015, 26, 045707. doi: 10.1088/0957-4484/26/4/045707

  78. [78]

      Shaina, P. R.; George, L.; Yadav, V.; Jaiswal, M. J. Phys. -Condes. Matter 2016, 28, 085301. doi: 10.1088/0953-8984/28/8/085301

  79. [79]

      Deng, B.; Wu, J.; Zhang, S.; Qi, Y.; Zheng, L.; Yang, H.; Tang, J.; Tong, L.; Zhang, J.; Liu, Z.; et al. Small 2018, 14, 1800725. doi: 10.1002/smll.201800725

  80. [80]

      Zhu, W.; Low, T.; Perebeinos, V.; Bol, A. A.; Zhu, Y.; Yan, H.; Tersoff, J.; Avouris, P. Nano Lett. 2012, 12, 3431. doi: 10.1021/nl300563h

  81. [81]

      Nicholl, R. J. T.; Conley, H. J.; Lavrik, N. V.; Vlassiouk, I.; Puzyrev, Y. S.; Sreenivas, V. P.; Pantelides, S. T.; Bolotin, K. I. Nat. Commun. 2015, 6. doi: 10.1038/ncomms9789

  82. [82]

      Deng, B.; Pang, Z. Q.; Chen, S. L.; Li, X.; Meng, C.; Li, J.; Liu, M.; Wu, J.; Qi, Y.; Dang, W.; et al. ACS Nano 2017, 11, 12337. doi: 10.1021/acsnano.7b06196

  83. [83]

      Li, B. -W.; Luo, D.; Zhu, L. Y.; Zhang, X.; Jin, S.; Huang, M.; Ding, F.; Ruoff, R. S. Adv. Mater. 2018, 30, 1706504. doi: 10.1002/adma.201706504

  84. [84]

      Pang, Z. Q.; Deng, B.; Liu, Z. F.; Peng, H.; Wei, Y. Carbon 2019, 143, 736. doi: 10.1016/j.carbon.2018.11.059

  85. [85]

      Yi, D.; Luo, D.; Wang, Z. -J.; Dong, J. C.; Zhang, X.; Willinger, M. G.; Ruoff, R. S.; Ding, F. Phys. Rev. Lett. 2018, 120, 246101. doi: 10.1103/PhysRevLett.120.246101

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