English

Vapor-Liquid-Solid Growth of Bi₂O₂Se Nanoribbons for High-Performance Transistors

• Tan Congwei ^1,2,†, ,
• Yu Mengshi ^1,†, ,
• Xu Shipu ^1, ,
• Wu Jinxiong ^1, ,
• Chen Shulin ^3, ,
• Zhao Yan ^1,2, ,
• Liu Cong ^1, ,
• Zhang Yichi ^1, ,
• Tu Teng ^1, ,
• Li Tianran ^1, ,
• Gao Peng ^3, ,
• Peng Hailin ^{1,2, ,}

• 1.

  Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China

• 2.

  Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China

• 3.

  Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China

• †These authors contributed equally to this work.

Corresponding author: Peng Hailin, hlpeng@pku.edu.cn

• Received Date: 29 August 2019
  Accepted Date: 23 October 2019
  Revised Date: 11 October 2019
  Available Online: 15 January 2020
• Fund Project:

  The project was supported by the National Natural Science Foundation of China (21733001, 21525310)

Abstract: Nanostructured bismuth oxyselenide (Bi₂O₂Se) semiconductor, a two-dimensional (2D) materials with high-mobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a two-dimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the space-confined transport in a plane, which leads to dramatic changes in electronic, optical, and thermal properties. These novel 1D nanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi₂O₂Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi₂O₂Se nanoribbons on mica substrates via a bismuth-catalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi₂O₂Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi₂Se₃ in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particles as the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi₂O₂Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi₂O₂Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi₂O₂Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the as-synthesized Bi₂O₂Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi₂O₂Se nanoribbons. As-synthesized single-crystal Bi₂O₂Se nanoribbons have widths in the range of 100 nm to 20 μm and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi₂O₂Se nanoribbons can be easily transferred onto a SiO₂/Si substrate. Fabricated into the top-gated field-effect device, the Bi₂O₂Se nanoribbon sample (transferred to the SiO₂/Si substrate) exhibited high electronic performances; these included a high electron mobility of ∼220 cm²∙V⁻¹∙s⁻¹ at room temperature, good switching behavior with on/off ratio of > 10⁶, and high on current density of ∼42 μA∙μm⁻¹ at a channel length of 10 μm. Therefore, Bi₂O₂Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.

Key words:
• Bismuth oxyselenide
•  /  Vapor-liquid-solid growth
•  /  Nanoribbons
•  /  CVD
•  /  High mobility

• 1. [1]

     Larrieu, G.; Han, X. L. Nanoscale 2013, 5, 2437. doi: 10.1039/c3nr33738c

  2. [2]

     Ryu, M.; Bien, F.; Kim, Y. AIP Adv. 2016, 6, 015311. doi: 10.1063/1.4940755

  3. [3]

     Lee, Y.; Luo, G.; Hou, F.; Chen, M.; Yang, C.; Shen, C.; Wu, W.; Shieh, J.; Yeh, W. IEEE J. Electron Devi. 2016, 4, 286. doi: 10.1109/jeds.2016.2590580

  4. [4]

     Bangsaruntip, S.; Majumdar, A.; Cohen, G. M.; Engelmann, S. U.; Zhang, Y.; Guillorn, M.; Gignac, L. M.; Mittal, S.; Graham, W. S.; Joseph, E. A.; et al. In Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm. 2010 Symposium on VLSI Technology, Symposium on VLSI Technology, Honolulu, USA, June 15–17, 2010; Dennison, C., Masaaki, N., Eds.; IEEE, 2010, 21–22. doi: 10.1109/vlsit.2010.5556136

  5. [5]

     Guo, H.; Lu, N.; Dai, J.; Wu, X.; Zeng, X. C. J. Phys. Chem. C 2014, 118, 14051. doi: 10.1021/jp505257g

  6. [6]

     Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Science 2008, 319, 1229. doi: 10.2307/20053480

  7. [7]

     Schwierz, F. Nat. Nanotechnol. 2010, 5, 487. doi: 10.1038/nnano.2010.89

  8. [8]

     Li, S.; Lin, Y. C.; Zhao, W.; Wu, J.; Wang, Z.; Hu, Z.; Shen, Y.; Tang, D. M.; Wang, J.; Zhang, Q.; et al. Nat. Mater. 2018, 17, 535. doi: 10.1038/s41563-018-0055-z

  9. [9]

     Watts, M. C.; Picco, L.; Russell-Pavier, F. S.; Cullen, P. L.; Miller, T. S.; Bartuś, S. P.; Payton, O. D.; Skipper, N. T.; Tileli, V.; Howard, C. A. Nature 2019, 568, 216. doi: 10.1038/s41586-019-1074-x

  10. [10]

      Lee, S.; Yang, F.; Suh, J.; Yang, S.; Lee, Y.; Li, G.; Choe, H.; Suslu, A.; Chen, Y.; Ko, C.; et al. Nat. Commun. 2015, 6, 8573. doi: 10.1038/ncomms9573

  11. [11]

      Peng, H.; Lai, K.; Kong, D.; Meister, S.; Chen, Y.; Qi, X. L.; Zhang, S. C.; Shen, Z. X.; Cui, Y. Nat. Mater. 2009, 9, 225. doi: 10.1038/nmat2609

  12. [12]

      Wu, J.; Yuan, H.; Meng, M.; Chen, C.; Sun, Y.; Chen, Z.; Dang, W.; Tan, C.; Liu, Y.; Yin, J.; et al. Nat. Nanotech. 2017, 12, 530. doi: 10.1038/nnano.2017.43

  13. [13]

      Yin, J.; Tan, Z.; Hong, H.; Wu, J.; Yuan, H.; Liu, Y.; Chen, C.; Tan, C.; Yao, F.; Li, T.; et al. Nat. Commun. 2018, 9, 3311. doi: 10.1038/s41467-018-05874-2

  14. [14]

      Quhe, R.; Liu, J.; Wu, J.; Yang, J.; Wang, Y.; Li, Q.; Li, T.; Guo, Y.; Yang, J.; Peng, H.; et al. Nanoscale 2019, 11, 532. doi: 10.1039/c8nr08852g

  15. [15]

      Yang, J.; Quhe, R.; Li, Q.; Liu, S.; Xu, L.; Pan, Y.; Zhang, H.; Zhang, X.; Li, J.; Yan, J.; et al. Adv. Electron. Mater. 2019, 5, 1800720. doi: 10.1002/aelm.201800720

  16. [16]

      Wu, J.; Tan, C.; Tan, Z.; Liu, Y.; Yin, J.; Dang, W.; Wang, M.; Peng, H. Nano Lett. 2017, 17, 3021. doi: 10.1021/acs.nanolett.7b00335

  17. [17]

      Tong, T.; Zhang, M.; Chen, Y.; Li, Y.; Chen, L.; Zhang, J.; Song, F.; Wang, X.; Zou, W.; Xu, Y.; et al. Appl. Phys. Lett. 2018, 113, 072106. doi: 10.1063/1.5042727

  18. [18]

      Chen, C.; Wang, M.; Wu, J.; Fu, H.; Yang, H.; Tian, Z.; Tu, T.; Peng, H.; Sun, Y.; Xu, X.; et al. Sci. Adv. 2018, 4, eaat8355. doi: 10.1126/sciadv.aat8355

  19. [19]

      Tan, C.; Tang, M.; Wu, J.; Liu, Y.; Li, T.; Liang, Y.; Deng, B.; Tan, Z.; Tu, T.; Zhang, Y.; et al. Nano Lett. 2019, 19 (3), 2148. doi: 10.1021/acs.nanolett.9b00381

  20. [20]

      Tian, X.; Luo, H.; Wei, R.; Zhu, C.; Guo, Q.; Yang, D.; Wang, F.; Li, J.; Qiu, J. Adv. Mater. 2018, 30, 1801021. doi: 10.1002/adma.201801021

  21. [21]

      Wu, M.; Zeng, X. C. Nano Lett. 2017, 17, 6309. doi: 10.1021/acs.nanolett.7b03020

  22. [22]

      Fu, Q.; Zhu, C.; Zhao, X.; Wang, X.; Chaturvedi, A.; Zhu, C.; Wang, X.; Zeng, Q.; Zhou, J.; Liu, F.; et al. Adv. Mater. 2019, 31, 1804945. doi: 10.1002/adma.201804945

  23. [23]

      Li, J.; Wang, Z.; Wen, Y.; Chu, J.; Yin, L.; Cheng, R.; Lei, L.; He, P.; Jiang, C.; Feng, L.; et al. Adv. Funct. Mater. 2018, 28, 1706437. doi: 10.1002/adfm.201706437

  24. [24]

      Khan, U.; Luo, Y.; Tang, L.; Teng, C.; Liu, J.; Liu, B.; Cheng, H. M. Adv. Funct. Mater. 2019, 29, 1807979. doi: 10.1002/adfm.201807979

  25. [25]

      Wu, J.; Qiu, C.; Fu, H.; Chen, S.; Zhang, C.; Dou, Z.; Tan, C.; Tu, T.; Li, T.; Zhang, Y.; et al. Nano Lett. 2019, 19, 197. doi: 10.1021/acs.nanolett.8b03696

  26. [26]

      Wang, S.; Rong, Y.; Fan, Y.; Pacios, M.; Bhaskaran, H.; He, K.; Warner, J. H. Chem. Mater. 2014, 26, 6371. doi: 10.1021/cm5025662

  27. [27]

      Yella, A.; Mugnaioli, E.; Panthofer, M.; Therese, H. A.; Kolb, U.; Tremel, W. C. Angew. Chem. Int. Ed. 2009, 48, 6426. doi: 10.1002/anie.200900546

  28. [28]

      Xiang, Y.; Cao, L.; Arbiol, J.; Brongersma, M. L.; Fontcuberta i Morral, A. Appl. Phys. Lett. 2009, 94, 163101. doi: 10.1063/1.3116625

  29. [29]

      Stanley, S. A.; Stuttle, C.; Caruana, A. J.; Cropper, M. D.; Walton, A. S. O. J. Phys. D: Appl. Phys. 2012, 45, 435304. doi: 10.1088/0022-3727/45/43/435304

  30. [30]

      Lee, S. K. C.; Yu, Y.; Perez, O.; Puscas, S.; Kosel, T. H.; Kuno, M. Chem. Mater. 2010, 22, 77. doi: 10.1021/cm902049p

  31. [31]

      Loubet, N.; Hook, T.; Montanini, P.; Yeung, C.; Kanakasabapathy, S.; Guillom, M.; Yamashita, T.; Zhang, J.; Miao, X.; Wang, J.; et al. 2017 Sym. VLSI Technol. 2017, T230. doi: 10.23919/vlsit.2017.7998183

  32. [32]

      Cheng, R.; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q.; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; et al. Asymetrically Strained High Performance Germanium Gate-All-Around Nanowire p-FETs Featuring 3.5 nm Wire Width and Contractible Phase Change Liner Stressor (Ge₂Sb₂Te5). 2013 IEEE International Electron Devices Meeting, International Electron Devices Meeting (IEDM), Washington, USA, Dec. 9–11, 2013; Ghani, T., eds.; IEEE, 2013. doi: 10.1109/iedm.2013.6724699

  33. [33]

      Zhang, C.; Li, X. Sol. State Electron. 2014, 93, 40. doi: 10.1016/j.sse.2013.12.005

•