引用本文:
邓宗武, 郭伟民, 刘焕明, 曹立礼. InP(110)理解面的能带弯曲[J]. 物理化学学报,
1999, 15(04): 303-307.
doi:
10.3866/PKU.WHXB19990404
Citation: Deng Zong-Wu, Guo Wei-Min, Liu Huan-Ming, Cao Li-Li. Band Bending of Cleaved InP(110) Surface[J]. Acta Physico-Chimica Sinica, 1999, 15(04): 303-307. doi: 10.3866/PKU.WHXB19990404
Citation: Deng Zong-Wu, Guo Wei-Min, Liu Huan-Ming, Cao Li-Li. Band Bending of Cleaved InP(110) Surface[J]. Acta Physico-Chimica Sinica, 1999, 15(04): 303-307. doi: 10.3866/PKU.WHXB19990404
InP(110)理解面的能带弯曲
English
Band Bending of Cleaved InP(110) Surface
Abstract:
The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed according to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation.
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Key words:
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InP
- / Band bending
- / Dynamic process
- / XPS
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