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无机固体材料中的忆阻效应

吴小峰 ,  袁龙 ,  黄科科 ,  冯守华

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引用本文: 吴小峰, 袁龙, 黄科科, 冯守华. 无机固体材料中的忆阻效应[J]. 无机化学学报, 2015, 31(9): 1726-1738. doi: 10.11862/CJIC.2015.254 shu
Citation:  WU Xiao-Feng, YUAN Long, HUANG Ke-Ke, FENG Shou-Hua. Memristive Effects in Inorganic Solid Materials[J]. Chinese Journal of Inorganic Chemistry, 2015, 31(9): 1726-1738. doi: 10.11862/CJIC.2015.254 shu

无机固体材料中的忆阻效应

  • 1.

    吉林大学化学学院, 无机合成与制备化学国家重点实验室, 长春 130012

    • 通讯作者: 冯守华,E-mail:shfeng@jlu.edu.cn
  • 基金项目:

    国家自然科学基金(No.21427802,21131002,21201075)资助项目。 (No.21427802,21131002,21201075)

摘要: 缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。

English

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  • 收稿日期:  2015-06-16
  • 网络出版日期:  2015-07-30
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