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• The authors regret that there are three figures to be corrected. First, the images in Figs. 4c and f of the main text were mistakenly placed. The correct Fig. 4 is shown below.

  Figure 4

  

  Figure 4.  (a) Device structure of fully stretchable transistor. (b) Images of the fully stretchable transistor from 0% to 100% strain. (c) Transfer curves of P3-Fe film at different strains along the charge transport direction and perpendicular to charge transport direction. Field-effect mobilities as a function of various strains for P2 and P2-Fe (d), P3 and P3-Fe (e). (f) Transfer curves of the stretchable transistor under 50% strain after multiple stretch-release cycles along the charge transport direction and perpendicular to charge transport direction. (g) Field-effect mobilities, on-currents and off-currents as a function of stretching-releasing cycles along the strain direction. (h) Retention rate (μ/μ₀) of carrier mobility as a function of various strains for P3-Fe compared with those of intrinsically stretchable polymers reported in the literatures.

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  Second, in Supporting information, we have corrected the images corresponding to the stretched P2 film in Fig. S10, as well as the images corresponding to the stretched P3 film in Fig. S12. The figures below show the correct Fig. S10 and Fig. S12.

  Figure S10

  

  Figure S10.  Optical microscopy images of P2 films under various strains, scale bar is 10 μm.

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  Figure S12

  

  Figure S12.  Optical microscopy images of P3 films under various strains, scale bar is 10 μm.

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  The authors would like to apologise for any inconvenience caused.

  
  
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  Figure 4  (a) Device structure of fully stretchable transistor. (b) Images of the fully stretchable transistor from 0% to 100% strain. (c) Transfer curves of P3-Fe film at different strains along the charge transport direction and perpendicular to charge transport direction. Field-effect mobilities as a function of various strains for P2 and P2-Fe (d), P3 and P3-Fe (e). (f) Transfer curves of the stretchable transistor under 50% strain after multiple stretch-release cycles along the charge transport direction and perpendicular to charge transport direction. (g) Field-effect mobilities, on-currents and off-currents as a function of stretching-releasing cycles along the strain direction. (h) Retention rate (μ/μ₀) of carrier mobility as a function of various strains for P3-Fe compared with those of intrinsically stretchable polymers reported in the literatures.

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  Figure S10  Optical microscopy images of P2 films under various strains, scale bar is 10 μm.

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  Figure S12  Optical microscopy images of P3 films under various strains, scale bar is 10 μm.

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