An ab initio potential energy surface and vibrational energy levels of HXeBr

Zheng Guo Huan En Cui Yang Dai Qian Xie

引用本文: Zheng Guo Huan,  En Cui Yang,  Dai Qian Xie. An ab initio potential energy surface and vibrational energy levels of HXeBr[J]. Chinese Chemical Letters, 2008, 19(5): 627-630. doi: 10.1016/j.cclet.2008.03.019 shu
Citation:  Zheng Guo Huan,  En Cui Yang,  Dai Qian Xie. An ab initio potential energy surface and vibrational energy levels of HXeBr[J]. Chinese Chemical Letters, 2008, 19(5): 627-630. doi: 10.1016/j.cclet.2008.03.019 shu

An ab initio potential energy surface and vibrational energy levels of HXeBr

摘要: A three-dimensional global potential energy surface for the electronic ground state of HXeBr molecule is constructed from morethan 4200 ab initio points. These points are generated using an internally contracted multi-reference configuration interactionmethod with the Davidson correction (icMRCI+Q) and large basis sets. The stabilities and dissociation barriers are identified fromthe potential energy surfaces. The three-body dissociation channel is found to be the dominate dissociation channel for HXeBr.Based on the obtained potentials, low-lying vibrational energy levels of HXeBr calculated using the Lanczos algorithm is found tobe in good agreement with the available experimental band origins.

English

  • 加载中
计量
  • PDF下载量:  1
  • 文章访问数:  741
  • HTML全文浏览量:  1
文章相关
  • 收稿日期:  2007-12-17
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

/

返回文章