引用本文:
Rui Bao JIA, Shi Xun WANG, Guo Xheng LI. FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si[J]. Chinese Chemical Letters,
1993, 4(7): 657-658.
Citation: Rui Bao JIA, Shi Xun WANG, Guo Xheng LI. FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si[J]. Chinese Chemical Letters, 1993, 4(7): 657-658.
Citation: Rui Bao JIA, Shi Xun WANG, Guo Xheng LI. FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si[J]. Chinese Chemical Letters, 1993, 4(7): 657-658.
FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si
摘要:
The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.
English
FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si
Abstract:
The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.
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