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Etching graphitic carbon nitride by acid for enhanced photocatalytic activity toward degradation of 4-nitrophenol

Si-Zhan Wu ,  Cai-Hong Chen ,  Wei-De Zhang

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Citation:  Si-Zhan Wu, Cai-Hong Chen, Wei-De Zhang. Etching graphitic carbon nitride by acid for enhanced photocatalytic activity toward degradation of 4-nitrophenol[J]. Chinese Chemical Letters, 2014, 25(9): 1247-1251. doi: 10.1016/j.cclet.2014.05.017 shu

Etching graphitic carbon nitride by acid for enhanced photocatalytic activity toward degradation of 4-nitrophenol

    • 通讯作者: Wei-De Zhang,
  • 基金项目:

    The authors thank the Guangdong Natural Science Foundation (No. S2012010008383) for financial support. (No. S2012010008383)

摘要: Graphitic carbon nitride (g-C3N4) with high photocatalytic activity toward degradation of 4-nitrophenol under visible light irradiation was prepared by HCl etching followed by ammonia neutralization. The structure, morphology, surface area, and photocatalytic properties of the prepared samples were studied. After treatment, the size of the γ-C3N4 decreased from several micrometers to several hundred nanometers, and the specific area of the γ-C3N4 increased from 11.5 m2/g to 115 m2/g. Meanwhile, the photocatalytic activity of γ-C3N4 was significantly improved after treatment toward degradation of 4-nitrophenol under visible light irradiation. The degradation rate constant of the small particle γ-C3N4 is 5.7 times of that of bulk γ-C3N4, which makes it a promising visible light photocatalyst for future applications for water treatment and environmental remediation.

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  • 收稿日期:  2014-02-07
  • 网络出版日期:  2014-04-03
通讯作者: 陈斌, bchen63@163.com
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