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熔盐电解SiO2/C直接制备SiC纳米线

赵春荣 ,  杨娟玉 ,  卢世刚

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引用本文: 赵春荣, 杨娟玉, 卢世刚. 熔盐电解SiO2/C直接制备SiC纳米线[J]. 无机化学学报, 2013, 29(12): 2543-2548. doi: 10.3969/j.issn.1001-4861.2013.00.371 shu
Citation:  ZHAO Chun-Rong, YANG Juan-Yu, LU Shi-Gang. Preparation of SiC Nanowires by Direct Electro-reduction of SiO2/C Pellets in Molten Salt[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(12): 2543-2548. doi: 10.3969/j.issn.1001-4861.2013.00.371 shu

熔盐电解SiO2/C直接制备SiC纳米线

  • 基金项目:

    国家863计划(No.2012AA110102)国家自然科学基金(No.51004016)资助项目。 (No.2012AA110102)国家自然科学基金(No.51004016)

摘要: 采用纳米SiO2和酚醛树脂为原料制备酚醛树脂裂解碳纳米SiO2复合阴极(硅碳物质的量的比为1∶1)，直接电解PFC/SiO2复合阴极，在900 ℃熔融盐CaCl2中，恒槽压2.0 V下电解，制备出碳化硅纳米线。采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)及其附带的能谱仪、X射线分析衍射仪(XRD)和拉曼光谱(Raman)对产物的组成、形貌、微观结构等进行了表征。结果表明：碳化硅纳米线呈立方晶体结构，其直径为4~13 nm，长可达数微米；室温下该纳米线在415 nm和534 nm附近有宽的发光峰。最后，讨论了碳化硅纳米线的生成机制。

English

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  • 收稿日期:  2013-04-23
  • 网络出版日期:  2013-07-15
通讯作者: 陈斌, bchen63@163.com
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