Citation: CHEN Ye, CHEN Jian-Hua, GUO Jin. Effect of Natural Impurities on the Electronic Structures and Semiconducting Properties of Sphalerite[J]. Acta Physico-Chimica Sinica, 2010, 26(10): 2851-2856. doi: 10.3866/PKU.WHXB20101001
天然杂质对闪锌矿电子结构和半导体性质的影响
English
Effect of Natural Impurities on the Electronic Structures and Semiconducting Properties of Sphalerite
A systematic study of the electronic structures of sphalerite containing fourteen kinds of natural impurities was performed by the density functional theory. The results show that Mn, Fe, Co, Ni, Cu, Cd, Hg, Ag, Pb, and Sb impurities narrow the bandgap of sphalerite and cause the absorption edge to increase. For all impurities except Cd and Hg, the Fermi level shifts to a higher energy level and impurity levels appear in the forbidden band. Fe, Ga, Ge, In, Sn, and Sb impurities change the sphalerite froma p-type toa n-type semiconductor while Mn, Co, Ni, Cu, Cd, Hg, Ag, and Pb impurities have no effect. Cu impurity changes the sphalerite from a direct bandgap to an indirect bandgap type semiconductor.
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