引用本文:
姚素薇, 张国庆, 郭鹤桐, 龚正烈. 铜在ρ-Si上激光诱导电沉积过程的研究[J]. 物理化学学报,
1995, 11(08): 730-733.
doi:
10.3866/PKU.WHXB19950812
Citation: Yao Su-Wei, Zhang Guo-Qing, Guo He-Tong, ng Zheng-Lie. An Investigation on the Process of Laser Induced Electrodeposition of Copper on ρ-type Silicon[J]. Acta Physico-Chimica Sinica, 1995, 11(08): 730-733. doi: 10.3866/PKU.WHXB19950812
Citation: Yao Su-Wei, Zhang Guo-Qing, Guo He-Tong, ng Zheng-Lie. An Investigation on the Process of Laser Induced Electrodeposition of Copper on ρ-type Silicon[J]. Acta Physico-Chimica Sinica, 1995, 11(08): 730-733. doi: 10.3866/PKU.WHXB19950812
English
An Investigation on the Process of Laser Induced Electrodeposition of Copper on ρ-type Silicon
Abstract:
Pretreatment of the substrate has obvious influence on the deposition. Both valence and conduction band reactions which cause the electrodeposition of Cu2+ can take place. Since ECu2+, the most probable energy level of Cu2+ is higher than the Ev of p-Si, a process including thermal excitation of electron from Ev to surface states level, and then to Cu2+ may be the probable charge transfer mechanism. During the laser induced selective deposition process, Iph ~ t curves are used to monitor the nuclei formation and growth. Besides an exponential decline in Iph, which is due to an increase in thickness of the deposits, some discontinuous current peaks owing to new nuclei formation on bare substrate are observed.
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Key words:
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ρ-type silicon
- / Laser
- / Electrodepostion
- / Copper
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