Citation: Pu Zong, Zhou Wei-Fang. Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)[J]. Acta Physico-Chimica Sinica, 1994, 10(04): 348-353. doi: 10.3866/PKU.WHXB19940412
VA族元素对阳极铅(II)氧化物膜半导体性质的影响(II)
用光电化学电流法研究了铅、铅砷、铅锑和铅铋合金在4.5 mol·L~(-1) H_2SO_4溶液(22 ℃)中，以0.9 V(vs．Hg/Hg_2SO_4)极化7 h而形成的阳极膜中的氧化铅的半导体性质，合金添加剂砷、锑和铋对t-PbO(四方氧化铝)和o-PbO(斜方氧化铝)的禁带宽度没有影响，从量子效率和电位的关系可求Pb，Pb-lat％As(at％表示原子百分比，全文同)，Pb-lat％Sb和Sb－lat％Bi上膜中t－Pbo的施主密度(N_D)分别为9.3×10~(15)，1.0×10~(16)，3.1×10~(16)和1.3×10~(17) cm~(-3)，平带位分别为-0.20，－0.22，－0.28和-0.08 V(vs．Hg/Hg_2SO_4)．比较VA元素砷、锑和铋对上述膜中t-PbO的N_D(从而自由电子密度)和膜中t-PbO的生长速率的影响，可认为法添加剂砷、锑和铋对阳极膜中t-PbO的作用符合Hauffe规则．
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关键词:
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阳极铅(II)氧化物膜
- / 半导体
- / 光电化学电流法
- / Haulfe规则
English
Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)
The semiconducting properties of t-PbO (also known as tet-PbO or α-PbO) in the anodic plumbous oxide films formed on lead, lead-arseinc, lead-animony and lead bismuth alloys in 4.5 mol·L~(-1) H_2SO_4(22 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 7 h have been studied using measu-rements of photo-electrochemical current. These elements have little effect on the values of the band-gap energy of t-PbO and o-PbO in the film. From the relation between quantum yield and electrode potential, the values of the donor density of the t-PbO in the films formed on Pb, Pb-lat%As, Pb-lat%Sb and Pb-lat%Bi are 9.3×10~(15)，1.0×10~(16)，3.1×10~(16) and 1.3×10~(17) cm~(-3), respectively. Meanwhile, the corresponding flat-band potentials range from -0.08 to -0.28 V(vs. Hg/Hg_2SO_4). By comparing the effect of these VA elements on the growth rate of the t-PbO with that on the donor density, it is concluded that these experimental results condorm to the Hauffe Rules.
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