Citation: WANG Jie, ZHUANG Hui-Zhao, XUE Cheng-Shan, LI Jun-Lin, XU Peng. Structure and Formation Mechanism of Sn-Doped ZnO Nanoneedles[J]. Acta Physico-Chimica Sinica, 2010, 26(10): 2840-2844. doi: 10.3866/PKU.WHXB20101024
Sn 掺杂ZnO 纳米针的结构及其生长机制
利用包括磁控溅射和热氧化的两步法在Si(111) 衬底上制备了Sn 掺杂ZnO 纳米针. 首先用磁控溅射法在Si(111) 衬底上制备Sn:Zn 薄膜, 然后在650oC的Ar 气氛中对薄膜进行热氧化, 制备出Sn 掺杂ZnO 纳米针. 样品的结构、成分和光学性质采用X 射线衍射(XRD) 、扫描电子显微镜(SEM) 、透射电子显微镜(TEM) 、高分辨透射电子显微镜(HRTEM) 、能量散射X 射线(EDX) 谱和光致发光(PL) 光谱等技术手段进行分析. 结果表明, 制备的样品为具有六方纤锌矿结构的单晶Sn 掺杂ZnO 纳米针, Sn 掺杂量为2.5%(x, 原子比), 底部和头部直径分别为200-500 nm 和40 nm, 长度为1-3 μm, 结晶质量较高. 室温光致发光光谱显示紫外发光峰比纯ZnO 的发光峰稍有蓝移, 这可归因于能谱分析中探测到的Sn 的影响. 基于本实验的实际条件, 简单探讨了Sn 掺杂ZnO 纳米针的生长机制.
English
Structure and Formation Mechanism of Sn-Doped ZnO Nanoneedles
We synthesized Sn -doped ZnO nanoneedles on Si(111) substrates in two steps: sputtering and thermal oxidation. First, a thin layer of the Sn :Zn films was deposited onto the Si(111) substrates ina JCK -500A radio -frequency magnetron sputtering system. Sn-doped ZnO nanoneedles were then grown by simple thermal oxidation of the as-deposited films at 650 oC in Ar atmosphere. The structural, componential, and optical properties of the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high -resolution transmission electron microscopy (HRTEM), energy dispersive X-ray (EDX) spectroscopy, and photoluminescence (PL) spectroscopy. The results reveal that the ZnO nanoneedles doped with 2.5%(x, atomic ratio) Sn are single crystalline with a wurtzite hexa nal structure. The lengths of the grown nanoneedles vary between 1 and 3μm. The root diameters of the needles range between 200 and 500 nm while the tips have an average diameter of about 40 nm. Moreover, most of the Sn-doped ZnO nanoneedles are of high crystal quality. Room temperature PL spectroscopy shows a blue-shift from the bulk bandgap emission, which can be attributed toa Sn composition in the nanoneedles as detected by EDX. Based on the reaction conditions, the growth mechanism of the Sn-doped ZnO nanoneedles was also discussed.
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Key words:
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Nanostructure
- / ZnO
- / Sn-doping
- / Sputtering
- / Optical property
- / Formation mechanism
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[1]
1. Iijima, S. Nature, 1991, 354: 56
1. Iijima, S. Nature, 1991, 354: 56
-
[2]
2. Pan, Z. W.; Dai, Z. R.;Wang, Z. L. Science, 2001, 291: 19472. Pan, Z. W.; Dai, Z. R.;Wang, Z. L. Science, 2001, 291: 1947
-
[3]
3. Yang, J. H.; Zheng, J. H.; Zhai, H. J.; Yang, X. M.; Yang, L. L.; Liu, Y.; Lang, J. H.; Gao, M. J. Alloy. Compd., 2010, 489: 513. Yang, J. H.; Zheng, J. H.; Zhai, H. J.; Yang, X. M.; Yang, L. L.; Liu, Y.; Lang, J. H.; Gao, M. J. Alloy. Compd., 2010, 489: 51
-
[4]
4. Qi, J. J.; Yang, Y.; Liao, Q. L.; Huang, Y. H.; Liu, J.; Zhang, Y. Acta Phys. -Chim. Sin., 2009, 25: 1721 [齐俊杰, 杨亚,廖庆 亮, 黄运华,刘娟,张跃.物理化学学报, 2009, 25: 1721]4. Qi, J. J.; Yang, Y.; Liao, Q. L.; Huang, Y. H.; Liu, J.; Zhang, Y. Acta Phys. -Chim. Sin., 2009, 25: 1721 [齐俊杰, 杨亚,廖庆 亮, 黄运华,刘娟,张跃.物理化学学报, 2009, 25: 1721]
-
[5]
5. Xing, Y. J.; Xi, Z. H.; Zhang, X. D.; Song, J. H.; Wang, R. M.; Xu, J.; Xue, Z. Q.; Yu, D. P. Appl. Phys. A, 2005, 80: 15275. Xing, Y. J.; Xi, Z. H.; Zhang, X. D.; Song, J. H.; Wang, R. M.; Xu, J.; Xue, Z. Q.; Yu, D. P. Appl. Phys. A, 2005, 80: 1527
-
[6]
6. Ren, X. L.; Han, D.; Chen, D.; Xia, H. L.; Wang, D.; Tang, F. Q. Acta Phys. -Chim. Sin., 2005, 21: 1419 [任湘菱,韩冬, 陈东,夏海龙, 王冬, 唐芳琼.物理化学学报, 2005, 21: 1419]6. Ren, X. L.; Han, D.; Chen, D.; Xia, H. L.; Wang, D.; Tang, F. Q. Acta Phys. -Chim. Sin., 2005, 21: 1419 [任湘菱,韩冬, 陈东,夏海龙, 王冬, 唐芳琼.物理化学学报, 2005, 21: 1419]
-
[7]
7. Wang, X. D.; Ding, Y.; Summers, C. J.;Wang, Z. L. J. Phys. Chem. B, 2004, 108: 87737. Wang, X. D.; Ding, Y.; Summers, C. J.;Wang, Z. L. J. Phys. Chem. B, 2004, 108: 8773
-
[8]
8. Liu, D. F.; Xiang, Y. J.; Zhang, Z. X.;Wang, J. X.; Gao, Y.; Song, L.; Liu, L. F.; Dou, X. Y.; Zhao, X. W.; Luo, S. D.; Wang, C. Y.; Zhou, W. Y.; Wang, G.; Xie, S. S. Nanotechnology, 2005, 16: 26658. Liu, D. F.; Xiang, Y. J.; Zhang, Z. X.;Wang, J. X.; Gao, Y.; Song, L.; Liu, L. F.; Dou, X. Y.; Zhao, X. W.; Luo, S. D.; Wang, C. Y.; Zhou, W. Y.; Wang, G.; Xie, S. S. Nanotechnology, 2005, 16: 2665
-
[9]
9. Park, W. I.; Yi, G. C.; Kim, M.; Pennycook, S. J. Advanced Materials, 2002, 14: 18419. Park, W. I.; Yi, G. C.; Kim, M.; Pennycook, S. J. Advanced Materials, 2002, 14: 1841
-
[10]
10. Gao, P. X.; Wang, Z. L. Appl. Phys. Lett., 2004, 84: 288310. Gao, P. X.; Wang, Z. L. Appl. Phys. Lett., 2004, 84: 2883
-
[11]
11. Yousefi, R.; Kamaluddin, B. Applied Surface Science, 2009, 255: 937611. Yousefi, R.; Kamaluddin, B. Applied Surface Science, 2009, 255: 9376
-
[12]
12. Lin, D. D.; Wu, H.; Pan, W. Advanced Materials, 2007, 19: 396812. Lin, D. D.; Wu, H.; Pan, W. Advanced Materials, 2007, 19: 3968
-
[13]
13. Pan, G. H.; Zhang, Q. F.; Zhang, J. Y.; Wu, J. L. Acta Phys. -Chim. Sin., 2006, 22: 1431 [潘光虎,张琦锋, 张俊艳,吴锦雷.物理化 学学报, 2006, 22: 1431]13. Pan, G. H.; Zhang, Q. F.; Zhang, J. Y.; Wu, J. L. Acta Phys. -Chim. Sin., 2006, 22: 1431 [潘光虎,张琦锋, 张俊艳,吴锦雷.物理化 学学报, 2006, 22: 1431]
-
[14]
14. Liu, J.; Zhang, Y.; Qi, J. J.; He, J.; Huang, Y. H.; Zhang, X. M. Acta Phys. -Chim. Sin., 2006, 22: 38 [刘娟,张跃,齐俊杰, 贺建,黄运华, 张晓梅. 物理化学学报, 2006, 22: 38]14. Liu, J.; Zhang, Y.; Qi, J. J.; He, J.; Huang, Y. H.; Zhang, X. M. Acta Phys. -Chim. Sin., 2006, 22: 38 [刘娟,张跃,齐俊杰, 贺建,黄运华, 张晓梅. 物理化学学报, 2006, 22: 38]
-
[15]
15. Chen, H. S.; Qi, J. J.; Huang, Y. H.; Liao, Q. L.; Zhang, Y. Acta Phys. -Chim. Sin., 2007, 23: 55 [陈红升, 齐俊杰,黄运华,廖庆 亮,张跃.物理化学学报, 2007, 23: 55]15. Chen, H. S.; Qi, J. J.; Huang, Y. H.; Liao, Q. L.; Zhang, Y. Acta Phys. -Chim. Sin., 2007, 23: 55 [陈红升, 齐俊杰,黄运华,廖庆 亮,张跃.物理化学学报, 2007, 23: 55]
-
[16]
16. Wei, Q.; Li, M. K.; Yang, Z.; Cao, L.; Zhang,W.; Liang, H. W. Acta Phys. -Chim. Sin., 2008, 24: 793 [魏强,李梦轲, 杨志, 曹璐,张威, 梁红伟.物理化学学报, 2008, 24: 793]16. Wei, Q.; Li, M. K.; Yang, Z.; Cao, L.; Zhang,W.; Liang, H. W. Acta Phys. -Chim. Sin., 2008, 24: 793 [魏强,李梦轲, 杨志, 曹璐,张威, 梁红伟.物理化学学报, 2008, 24: 793]
-
[17]
17. Yang, Y.; Qi, J. J.; Zhang, Y.; Liao, Q. L.; Tang, L. D.; Qin, Z. Applied Physics Letters, 2008, 92: 18311717. Yang, Y.; Qi, J. J.; Zhang, Y.; Liao, Q. L.; Tang, L. D.; Qin, Z. Applied Physics Letters, 2008, 92: 183117
-
[18]
18. Deng, R.; Zhang, X. T.; Zhang, E.; Liang, Y.; Liu, Z.; Xu, H. Y.; Hark, S. K. J. Phys. Chem. C, 2007, 111: 1301318. Deng, R.; Zhang, X. T.; Zhang, E.; Liang, Y.; Liu, Z.; Xu, H. Y.; Hark, S. K. J. Phys. Chem. C, 2007, 111: 13013
-
[19]
19. Su, Y.; Li, L.; Chen, Y. Q.; Zhou, Q. T.; Gao, M.; Chen, Q.; Feng, Y. Journal of Crystal Growth, 2009, 311: 246619. Su, Y.; Li, L.; Chen, Y. Q.; Zhou, Q. T.; Gao, M.; Chen, Q.; Feng, Y. Journal of Crystal Growth, 2009, 311: 2466
-
[20]
20. Li, S. Y.; Lin, P.; Lee, C. Y.; Tseng, T. Y.; Huang, C. J. J. Phys. D- Appl. Phys., 2004, 37: 227420. Li, S. Y.; Lin, P.; Lee, C. Y.; Tseng, T. Y.; Huang, C. J. J. Phys. D- Appl. Phys., 2004, 37: 2274
-
[21]
21. Fang, X. S.; Ye, C. H.; Zhang, L. D.; Li, Y.; Xiao, Z. D. Chemistry Letters, 2005, 34: 43621. Fang, X. S.; Ye, C. H.; Zhang, L. D.; Li, Y.; Xiao, Z. D. Chemistry Letters, 2005, 34: 436
-
[22]
22. Ortega, Y.; Fern佗ndez, P.; Piqueras, J.; Piqueras, J. Nanotechnology, 2007, 18: 11560622. Ortega, Y.; Fern佗ndez, P.; Piqueras, J.; Piqueras, J. Nanotechnology, 2007, 18: 115606
-
[23]
23. Bougrine, A.; Hichou, A. E.; Addou, M.; Ebothe, J.; Kachouane, A.; Troyon, M. Mater. Chem. Phys., 2003, 80: 43823. Bougrine, A.; Hichou, A. E.; Addou, M.; Ebothe, J.; Kachouane, A.; Troyon, M. Mater. Chem. Phys., 2003, 80: 438
-
[24]
24. Wang, D. X.; Zhuang, H. Z.; Xue, C. S.; Shen, J. B.; Liu, H. Materials Letters, 2009, 63: 37024. Wang, D. X.; Zhuang, H. Z.; Xue, C. S.; Shen, J. B.; Liu, H. Materials Letters, 2009, 63: 370
-
[25]
25. Panda, S. K.; Singh, N.; Pal, S.; Jacob, C. J. Mater. Sci.-Mater. Electron., 2009, 20: 771
25. Panda, S. K.; Singh, N.; Pal, S.; Jacob, C. J. Mater. Sci.-Mater. Electron., 2009, 20: 771
-
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-
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