Citation: XU Yu-Qun, ZHANG Jun, YUAN Bing-Kai, DENG Ke, YANG Rong, QIU Xiao-Hui. Electric Field Assisted Hopping of Tert-Butylamine on Cu(111) Surface[J]. Acta Physico-Chimica Sinica, 2010, 26(10): 2686-2690. doi: 10.3866/PKU.WHXB20101012
隧道结电场辅助下叔丁胺分子在Cu(111) 表面跳跃
English
Electric Field Assisted Hopping of Tert-Butylamine on Cu(111) Surface
The lateral hopping of tert-butylamine (t-BA) molecules ona Cu(111) surface was studied by scanning tunneling microscopy (STM) at 78 K. The hopping probabilities of the molecules in the tunneling junction were found to depend linearly on the applied tunneling current, indicating a single electron-induced process. Hopping probabilities under an electric field of opposite polarity was found to be different. This non-equivalence is attributed to an electric field assisted diffusion where the adsorption energy and the diffusion barrier of the t-BA molecule are different when the polar molecule is subjected to opposite electric fields.
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