引用本文:
施申蕾, 楼辉, 张建华, 吕萍, 江宁, 何丕模, 鲍世宁. COT-H在金属Ru表面上沉积的光电子能谱分析[J]. 物理化学学报,
2002, 18(01): 30-33.
doi:
10.3866/PKU.WHXB20020107
Citation: Shi Shen-Lei, Lou Hui, Zhang Jian-Hua, Lü Ping, Jiang Ning, He Pi-Mo, Bao Shi-Ning. Investigation on the Interface between COT-H and Ru by UPS[J]. Acta Physico-Chimica Sinica, 2002, 18(01): 30-33. doi: 10.3866/PKU.WHXB20020107
Citation: Shi Shen-Lei, Lou Hui, Zhang Jian-Hua, Lü Ping, Jiang Ning, He Pi-Mo, Bao Shi-Ning. Investigation on the Interface between COT-H and Ru by UPS[J]. Acta Physico-Chimica Sinica, 2002, 18(01): 30-33. doi: 10.3866/PKU.WHXB20020107
COT-H在金属Ru表面上沉积的光电子能谱分析
摘要:
采用紫外光电子能谱（UPS），分析了不对称四苯基四苯乙炔基环辛四烯（COTH）有机发光材料与金属之间的界面电子结构，研究了在金属/COTH界面上的逸出功变化.UPS谱中位于费米能级以下5.6、7.9和10.2 eV处的三个谱峰分别来自于COTH材料中苯环的πCC、σCC和σCH轨道.位于3.8 eV处的谱峰反映了八个苯环聚合后具有π轨道特性的C－C键.从UPS谱图中可以看到， COTH材料的最高占有态（HOS：highest occupied state）位于费米能级以下1.8 eV处.COTH材料的逸出功只有3.2 eV，比清洁Ru表面的逸出功小1.0 eV.角分辨紫外光电子能谱（ARUPS）的结果表明,组成COTH分子应该近似平行于衬底表面.
English
Investigation on the Interface between COT-H and Ru by UPS
Abstract:
The electronic structure of the interface between cyclooctatetrene(COTH) and Ru metal is studied by the ultraviolet photoelectron spectroscopy(UPS). Three peaks are observed at 5.6, 7.9 and 10.2 eV below the Fermi level, they are related to the πCC, σCC and σCH bands of the phenyl in the COTH material respectively. The peak at 3.8 eV below the Fermi level is related to the C－C band with π characteristic orbit derived from the COTH containing eight phenyls. The highest occupied state (HOS) of COTH is at 1.8 eV below the Fermi level. The work function of COTH is only 3.2 eV, 1.0 eV lower than that of clean Ru. The results of the angle resolved ultraviolet photoelectron spectroscopy (ARUPS) suggest that the molecule of COTH is approximately parallel to the substrate surface.
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