引用本文:
朱文, 杨君友, 周东祥, 肖承京, 段兴凯. 碲欠电位沉积于金衬底上碲离子浓度和扫描速率对欠电位的影响[J]. 应用化学,
2008, 25(6): 633-636.
Citation: ZHU Wen, YANG Jun-You, ZHOU Dong-Xiang, XIAO Cheng-Jing, DUAN Xing-Kai. Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate[J]. Chinese Journal of Applied Chemistry, 2008, 25(6): 633-636.
Citation: ZHU Wen, YANG Jun-You, ZHOU Dong-Xiang, XIAO Cheng-Jing, DUAN Xing-Kai. Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate[J]. Chinese Journal of Applied Chemistry, 2008, 25(6): 633-636.
碲欠电位沉积于金衬底上碲离子浓度和扫描速率对欠电位的影响
English
Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate
Abstract:
The effects of pivotal experimental parameters,such as Te ion concentration and scan rate,on the mechanism of Te underpotential deposition (UPD) and its voltammetry characterization were studied with a system of Te underpotential deposition on Au substrate.The results show that the voltammetry characterization of Te underpotential deposition on Au surface was dependent on the Te ion concentration,and the variation in the metal ion concentration may affect the kinetics of the UPD process.Scan rate dependent cyclic voltammetry experiments reveal that the peak current of the Te UPD peak is not a linear function of the scan rate,v,but a linear function of a 2/3 power of the scan rate,v2/3.It was confirmed that Te UPD on Au obeyed a two-dimensional nucleation and growth mechanism.
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