引用本文:
钱道荪, 孙立中, 沈毅. n-GaAs为基的光电化学电池输出特性[J]. 应用化学,
1988, 5(5): 93-95.
Citation: Qian Daosun, Sun Lizbong, Shen Yi. A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC) BASED ON n-GaAs[J]. Chinese Journal of Applied Chemistry, 1988, 5(5): 93-95.
Citation: Qian Daosun, Sun Lizbong, Shen Yi. A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC) BASED ON n-GaAs[J]. Chinese Journal of Applied Chemistry, 1988, 5(5): 93-95.
English
A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC) BASED ON n-GaAs
Abstract:
In this paper the output characteristics of PEC cell based on n-GaAs are studied.The influences of light intensity,chemical etching,concentration of redox system and ion modification on the conversion efficiency of PEC cell are observed.The conversion efficiency reaches 23.9% when the light intensity is low(9.61mW.cm-2),with the electrode being repeatedly etched and modified by Ni2+ ion.The effect of pH on the flatband potential is determined.
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Key words:
- Gallium arsenide
- / Photoelectrochemical cell
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