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Citation: Li Xueliang, Lin Jianxin. On Mechanism of Electropolishing of Copper Electrode[J]. Chinese Journal of Applied Chemistry, ;1994, 11(6): 81-84. shu

On Mechanism of Electropolishing of Copper Electrode

Li Xueliang ,
Lin Jianxin

1.
Hefei Polytechnical University, Hefei 230009

Received Date: 31 January 1994
Available Online: 25 April 1994
Fund Project:

The fast triangular wave and potential sweep techniques were used to study the anodic film of Cu formed in 12.0 mol/L H₃PO₄.The solid film formed on copper during electropolishing is a n-type semiconductor and has a depth of 0.75~5.6nm and capacitance of 7~12 μF/cm²,EDAX and XPS results showed that the predominate constitution of the filmwas Cu₂O and Cu₂O·H₂O.The mechanism of the electropolishing has been discussed.
- copper,
- electropolishing,
- anodic film
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