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Citation: ZHAI Hua-Song, WANG Kun-Peng, YU Chun-Yan, ZHAI Guang-Mei, DONG Hai-Liang, XU Bing-She. Effect of N2 Flow Rate on Morphology, Optical and Electrical Properties of GaN[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(10): 2027-2033. doi: 10.3969/j.issn.1001-4861.2013.00.323 shu

Effect of N2 Flow Rate on Morphology, Optical and Electrical Properties of GaN

  • 1.

    1 Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;

  • Received Date: 13 May 2013
    Available Online: 6 June 2013

    Fund Project: 国家自然科学基金(No.51002102) (No.51002102)山西省回国留学人员重点科研(2009-03)资助项目。 (2009-03)

  • GaN micro/nanostructures were synthesized by chemical vapor deposition method (CVD) on Si (100) substrate with catalyst Ni, Ga and NH3 as raw materials. Effect of N2 flow rate on the morphology as well as optical and electrical properties of GaNwere researched. The morphology, structure, composition, optical and electrical properties were characterized by Field emission scanning electron microscopy (SEM), Transmission electron microscopy(TEM), X-ray diffraction (XRD), Energy dispersive X-ray spectroscopy (EDS), Photoluminescence (PL) and Hall effect measurement system (HMS-3000). The results indicate that with the increase of N2 flow rate, the morphology of GaNevolved from microrods to vermicular-like wires and then to smooth nanowires. All samples are hexagonal wurtzite, and show near-band-edge UVemission peaks of 383 nm and blue light emission peaks of about 470 nm. Hall test results show that all samples are p-type. Furthermore, the morphology evolution mechanisms of GaNare analyzed.
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