Citation: QIN Xiu-Juan, SHAO Guang-Jie, ZHAO Lin. Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(4): 723-728. doi: 10.3969/j.issn.1001-4861.2013.00.061 shu

Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique

1.
1 Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao, Hebei 066004, China;

Received Date: 25 July 2012
Available Online: 8 October 2012
Fund Project: 河北省自然科学基金(No.B2012203070) (No.B2012203070)河北省教育厅科学研究计划河北省高等学校自然科学研究重点项目(No.ZH2011228)资助项目。 (No.ZH2011228)

Al-doped ZnO thin films (AZO) fabrication technique with low cost, large area, high deposition rate, well uniformity and excellent optical and electrical properties has been one of the most important aims in the transparent conductive oxide films research field. AZO thin films were grown on the glass substrates by cold-wall aerosol-assisted chemical vapour deposition (AACVD) method in this paper. Structural, optical and electrical properties of AZO films grown at different substrate temperature were investigated in detail. The samples were tested by X-Ray Diffraction, Atomic Force Microscopy, UV-Vis and Photoluminescence Spectroscopy. Results indicate that influence of the substrate temperature on the preferred orientation growth of AZO films appears undulant change during the course of AZO film deposited by AACVD. Distinct electrical properties transition takes place at around 400℃. Optical properties and preferred orientation growth of the ZnO films transition take place at around 450℃. Microcosmic mechanism was discussed that the effect of substrate temperature on the structural, optical and electrical properties of AZO films grown by AACVD method. Sheet resistance and the average transmittances in the visible regions of AZO films grown at 400℃ is about 190 Ω/□, 80% respectively.
- aerosol-assisted chemical vapour deposition (AACVD);AZO film;temperature;polar semiconductor;crystalline quality
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沈阳化工大学材料科学与工程学院沈阳 110142