Citation:
FAN Xuge, LI Guocai, CHENG Chaoqun, HU Jie. Progress in Controlled Fabrication Techniques and Applications of Silicon Nanowires Associated with Metal-assisted Chemical Etching[J]. Chinese Journal of Applied Chemistry,
;2013, 30(11): 1257-1264.
doi:
10.3724/SP.J.1095.2013.30048
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Metal-assisted chemical etching(MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film.The recent progress in the fabrication of silicon nanowires on the basis of MacEtch is reviewed.First,the basic process and mechanism of metal-assisted is briefly introduced.Then template-based metal-assisted chemical etching methods are presented in detail,which can achieve controlled preparation of highly ordered silicon nanowires with high aspect ratio.Next,the introduction to the potential application of silicon nanowires obtained by MacEtch is given,ranging from lithium ion battery,solar cell,to gas detection and biomimetic superhydrophobicity,demonstrating promising potentials of MacEtch.Finally,current problems and future research and development directions of MacEtch are discussed.
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