Citation: MA Xiao, XU Chongying, XU Dongsheng, DING Yuqiang, JIN Chenggang, JI Peiyu. Synthesis and Application of Guanidinato Silicon Precursors[J]. Chinese Journal of Applied Chemistry, ;2019, 36(10): 1179-1185. doi: 10.11944/j.issn.1000-0518.2019.10.190050 shu

Synthesis and Application of Guanidinato Silicon Precursors

a.
School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
b.
Jiangsu Nata Opto-Electronic Material Co. Ltd., Suzhou, Jiangsu 215001, China
c.
School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China

Corresponding author: XU Chongying, chongying_xu@yahoo.com
Received Date: 26 February 2019
Revised Date: 15 April 2019
Accepted Date: 5 May 2019

Fund Project: National Science and Technology Major Project Ultra Large-Scale Integrated Circuit Manufacture Complete Set of Equipment and Technology 2016ZX02301003-004-004Supported by National Science and Technology Major Project Ultra Large-Scale Integrated Circuit Manufacture Complete Set of Equipment and Technology(No.2016ZX02301003-004-004)

Figures(7)

Three silicon compounds were synthesized by reaction of dimethyldichlorosilane with 1, 1, 3, 3-tetramethylguanidine substituent and lithium amide. The structures of the compounds were verified by ¹H nuclear magnetic resonance (NMR), ¹³C NMR, electron ionization-mass spectrometry (EI-MS), and elemental analysis. The thermal stability and vapor pressures of these compounds were evaluated by thermo gravimetric analysis(TGA). The results show a nearly pure volatilization with low decomposition process and residual(< 1%). The highest vapor pressure ranges from 3600 Pa to 5300 Pa, which is suitable for chemical vapor deposition (CVD) precursors. Silicon films were prepared by using dimethyl-guanidinato-ethylmethylamide silane as the precursor in Helicon wave plasma CVD (HWP-CVD). The properties of the films were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The films are composed of Si, N, and C. Guanidinate-based silicon compounds as CVD precursors have potential applications in fabrication of semiconductor devices.
- guanidinate,
- precursor,
- chemical vapor deposition,
- application
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