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Citation: Yongchao ZHU, Wenjie LIANG, Hai XU. Raman spectroscopic layer-dependent of Bi2SeO5 nanosheets and their encapsulation performance for two-dimensional materials[J]. Chinese Journal of Inorganic Chemistry, ;2026, 42(3): 584-592. doi: 10.11862/CJIC.20250217 shu

Raman spectroscopic layer-dependent of Bi2SeO5 nanosheets and their encapsulation performance for two-dimensional materials

  • Key Laboratory of Hunan Province for Chemical Power Source, College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China

  • Corresponding author: Hai XU, xhisaac@csu.edu.cn
  • Received Date: 28 June 2025
    Revised Date: 22 January 2026

Figures(3)

  • Systematic studies were conducted on the Raman spectroscopic properties of Bi2SeO5, revealing that Raman peak intensity increased with nanosheet thickness, exhibiting a distinct thickness dependence. Furthermore, Bi2SeO5 was integrated with typical 2D semiconductors, such as in back-gated field-effect transistors (FETs) with MoS2 as the channel, where Bi2SeO5 achieves efficient gate modulation due to its excellent dielectric properties. The devices demonstrated a high on/off ratio of up to 106 and a low subthreshold swing (SS) of 144 mV·dec-1, highlighting outstanding dielectric modulation capability. Meanwhile, as an encapsulation layer, Bi2SeO5 could effectively protect air-sensitive black phosphorus (BP) and indium selenide (InSe), significantly enhancing their stability in air. These results confirm that Bi2SeO5 can form smooth and dense interfaces with 2D materials, and that it possesses both excellent dielectric properties and efficient protective capabilities.
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