Citation: Chuan′an DING, Weibo YAN, Shaoying WANG, Hao XIN. Preparation of wide-band gap copper indium gallium sulfide solar cells by solution method[J]. Chinese Journal of Inorganic Chemistry, ;2025, 41(9): 1755-1764. doi: 10.11862/CJIC.20250198 shu

Preparation of wide-band gap copper indium gallium sulfide solar cells by solution method

State Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China

Corresponding author: Hao XIN, iamhxin@njupt.edu.cn
Received Date: 10 June 2025
Revised Date: 23 July 2025

Figures(5)

Cu(In, Ga)S₂ semiconductor thin films were fabricated via a blading method using metal salts and thiourea precursor solutions. The influence of the Ga to Ga+In ratio (GGI) on material properties and solar cell performance was systematically investigated. Results demonstrated that the band gap of Cu(In, Ga)S₂ progressively widens with increasing GGI. While moderate GGI can enhance grain growth and improve device open-circuit voltage (V_OC) and fill factor (FF), excessive Ga incorporation hinders crystallinity and degrades photovoltaic performance. Optimal performance was achieved at GGI of 0.25, yielding a band gap of 1.69 eV, and a record photoelectric conversion efficiency of 9.06% for solution-processed wide-band gap Cu(In, Ga)S₂ solar cells, representing a 37.48% improvement over Ga-free reference devices. Further analysis confirms that Ga alloying effectively reduces both bulk and interfacial defect densities, improves heterojunction interface quality, and significantly suppresses carrier recombination.
- solution method,
- wide-band gap,
- copper indium gallium sulfide,
- thin film solar cells,
- Ga alloying
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