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Citation: Jian-Hao LI, Han SONG, Zheng-Yan ZHANG, Zhen-Xiao PAN, Xin-Hua ZHONG. Preparation of High-Efficiency Zn-Cu-In-Se Quantum Dot-Sensitized Solar Cells by ZnS/SiO2 Synergistic Photoanode Coating[J]. Chinese Journal of Inorganic Chemistry, ;2022, 38(1): 84-92. doi: 10.11862/CJIC.2022.025 shu

Preparation of High-Efficiency Zn-Cu-In-Se Quantum Dot-Sensitized Solar Cells by ZnS/SiO2 Synergistic Photoanode Coating

  • Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, Guangzhou 510642, China

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  • The synergistic photoanode coating strategy was applied to inhibit the charge recombination processes at the photoanode/electrolyte interface and improve the photovoltaic performance of Zn-Cu-In-Se (ZCISe) quantum dotsensitized solar cells (QDSC). On the surface of ZCISe QD-sensitized photoanode, ZnS and SiO2 layers were successively coated by the solution route to form double passivation coating layers. This double-layer treatment offers more effective charge recombination inhibition than the traditional ZnS single coating layer, thus obtaining higher photovoltaic performance for the resulting QDSC. The results indicated that with the coating of ZnS/SiO2 double passivation layers, the efficiency was increased from 12.17% corresponding to cells with the traditional single ZnS coating to 13.23%. This is mainly due to the effective inhibition of the charge recombination processes at the photoanode/electrolyte interface, and the charge collection efficiency is improved accordingly.
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