Citation: Xu HAN, Bo-wen SUN, Rui-xue XU, Jing XU, Wang HONG, Kai QIAN. Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(4): 577-591. doi: 10.11862/CJIC.2021.081 shu

Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode

Xu HAN ¹ ,
Bo-wen SUN ¹ ,
Rui-xue XU ¹ ,
Jing XU ¹ ,
Wang HONG ¹ ,
Kai QIAN ^{1, 2,,}

1.
School of Microelectronics, Shandong University, Jinan 250101, China
2.
Shenzhen Research Institute, Shandong University, Shenzhen, Guangdong 518057, China

Corresponding author: Kai QIAN, kaiqian@sdu.edu.cn
Received Date: 30 September 2020
Revised Date: 28 January 2021

Figures(16)

With the development of electronic technology, functional electronic devices with characteristics such as transparency and flexibility have received widespread attention. As a novel electronic device, the memristor has broad application prospects in the new generation of information technology including low-power neuromorphic computing, non-volatile logic, data storage, etc., and has become a new type of nanodevice that has attracted much attention in recent years. Indium tin oxide, which is an ideal conductive oxide material for transparent memristor preparation due to its excellent optical transparency, is always used in memristor. This review first briefly introduces the structure of memristors, and then reviews the research and application of memristors based on indium tin oxide materials, including their use as memory, electronic synapses, and nociceptor. Then the resistive switching mechanism of indium tin oxide based memristors, especially the newly discovered indium diffusion mechanism in recent years, is summarized. At last, the development prospect of indium tin oxide memristors is summarized and forecasted.
- memristor,
- indium tin oxide,
- resistance switching mechanism,
- indium diffusion,
- transparent device
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