Citation: Xu HAN, Bo-wen SUN, Rui-xue XU, Jing XU, Wang HONG, Kai QIAN. Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(4): 577-591. doi: 10.11862/CJIC.2021.081 shu

Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode

Xu HAN ¹ ,
Bo-wen SUN ¹ ,
Rui-xue XU ¹ ,
Jing XU ¹ ,
Wang HONG ¹ ,
Kai QIAN ^{1, 2,,}

1.
School of Microelectronics, Shandong University, Jinan 250101, China
2.
Shenzhen Research Institute, Shandong University, Shenzhen, Guangdong 518057, China

Corresponding author: Kai QIAN, kaiqian@sdu.edu.cn
Received Date: 30 September 2020
Revised Date: 28 January 2021

Figures(16)

With the development of electronic technology, functional electronic devices with characteristics such as transparency and flexibility have received widespread attention. As a novel electronic device, the memristor has broad application prospects in the new generation of information technology including low-power neuromorphic computing, non-volatile logic, data storage, etc., and has become a new type of nanodevice that has attracted much attention in recent years. Indium tin oxide, which is an ideal conductive oxide material for transparent memristor preparation due to its excellent optical transparency, is always used in memristor. This review first briefly introduces the structure of memristors, and then reviews the research and application of memristors based on indium tin oxide materials, including their use as memory, electronic synapses, and nociceptor. Then the resistive switching mechanism of indium tin oxide based memristors, especially the newly discovered indium diffusion mechanism in recent years, is summarized. At last, the development prospect of indium tin oxide memristors is summarized and forecasted.
- memristor,
- indium tin oxide,
- resistance switching mechanism,
- indium diffusion,
- transparent device
1. [1]
  Chua L O. IEEE Trans. Circuits Syst. , 1971, 18(5): 507-519
2. [2]
  Strukov D B, Snider G S, Stewart D R, Williams R S. Nature, 2008, 453(7191): 80-83
3. [3]
  Baldi L, Bez R, Sandhu G. Solid State Electron. , 2014, 102: 2-11
4. [4]
  Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, Petraru A, Hwang C S. Rep. Prog. Phys. , 2012, 75(7): 076502
5. [5]
  Zhang Z H, Wang Z W, Shi T, Bi C, Rao F, Cai Y M, Liu Q, Wu H Q, Zhou P. InfoMat, 2020, 2(2): 261-290
6. [6]
  Li Y T, Long S B, Liu Q, Lü H B, Liu S, Liu M. Chin. Sci. Bull. , 2011, 56(28/29): 3072-3078
7. [7]
  ZHANG Y, LONG S B, LIU M. Physics, 2017, 46(10): 645-657
8. [8]
  LONG S B, LIU Q, LÜ H B, LIU M. Sci. Sin. -Phys. Mech. Astron. , 2016, 46(10): 107311
9. [9]
  Yang J J, Strukov D B, Stewart D R. Nat. Nanotechnol. , 2013, 8(1): 13-24
10. [10]
  Pan F, Gao S, Chen C, Song C, Zeng F. Mater. Sci. Eng. R, 2014, 83: 1-59
11. [11]
  Zidan M A, Strachan J P, Lu W D. Nat. Electron. , 2018, 1(1): 22-29
12. [12]
  Chang T C, Chan K C, Tsai T M, Chu T J, Sze S M. Mater. Today, 2016, 19(5): 254-264
13. [13]
  GUO X, TAN Z H, YIN X B, LI H, CHEN L Q, GUO X X. Chin. Sci. Bull. , 2014, 59(30): 2926-2936
14. [14]
  Jeong H, Shi L. J. Phys. D: Appl. Phys. , 2019, 52(2): 023003
15. [15]
  Ravichandran V, Li C, Banagozar A, Yang J J, Xia Q F. Sci. China Inf. Sci. , 2018, 61(6): 060423
16. [16]
  Zhang Y, Wang Z R, Zhu J D, Yang Y C, Rao M Y, Song W H, Zhuo Y, Zhang X M, Cui M L, Shen L L, Huang R, Yang J J. Appl. Phys. Rev. , 2020, 7(1): 011308
17. [17]
  Zhu J D, Zhang T, Yang Y C, Huang R. Appl. Phys. Rev. , 2020, 7(1): 011312
18. [18]
  ZHANG C X, CHEN Y, YI M D, ZHU Y, LI T F, LIU L T, WANG L Y, XIE L H, HUANG W. Sci. Sin. Inform. , 2018, 48(2): 115-142
19. [19]
  Yao P, Wu H, Gao B, Tang J, Zhang Q, Zhang W, Yang J J, Qian H. Nature, 2020, 577(7792): 641-646
20. [20]
  Cheng L, Li Y, Yin K S, Hu S Y, Su Y T, Jin M M, Wang Z, Chang T C, Miao X S. Adv. Funct. Mater. , 2019, 29(49): 1905660
21. [21]
  WANG Y H, LIU C, HUANG R, YANG Y C. Chin. Sci. Bull. , 2019, 65(10): 904-915
22. [22]
  Cha J H, Yang S Y, Oh J, Choi S, Park S, Jang B C, Ahn W, Choi S Y. Nanoscale, 2020, 12(27): 14339-14368
23. [23]
  Xia Q F, Yang J J. Nat. Mater. , 2019, 18(4): 309-323
24. [24]
  Wang Z R, Wu H Q, Burr G W, Hwang C S, Wang K L, Xia Q F, Yang J J. Nat. Rev. Mater. , 2020, 5(3): 173-195
25. [25]
  Huh W, Lee D, Lee C H. Adv. Mater. , 2020, 32(51): 2002092
26. [26]
  Qian K, Nguyen V C, Chen T, Lee P S. Adv. Electron. Mater. , 2016, 2(4): 1500370
27. [27]
  Zhao X N, Xu H Y, Wang Z Q, Lin Y, Liu Y C. InfoMat, 2019, 1: 183-210
28. [28]
  SHAO Y J, SHEN J, GONG S K, CHEN W, ZHOU J. Chinese J. Inorg. Chem. , 2020, 36(11): 2093-2099
29. [29]
  WU X F, YUAN L, HUANG K K, FENG S H. Chinese J. Inorg. Chem. , 2015, 31(9): 1726-1738
30. [30]
  Zhao Q L, Xie Z J, Peng Y P, Wang K Y, Wang H D, Li X N, Wang H W, Chen J S, Zhang H, Yan X B. Mater. Horiz. , 2020, 7(6): 1495-1518
31. [31]
  LIU Y C, LIN Y, WANG Z Q, XU H Y. Acta Phys. Sin. , 2019, 68(16): 168504
32. [32]
  Choi B J, Torrezan A C, Strachan J P, Kotula P G, Lohn A J, Marinella M J, Li Z Y, Williams R S, Yang J J. Adv. Funct. Mater. , 2016, 26(29): 5290-5296
33. [33]
  Zhu L G, Zhou J, Guo Z L, Sun Z M. J. Materiomics, 2015, 1(4): 285-295
34. [34]
  Gao S, Yi X, Shang J, Liu G, Li R W. Chem. Soc. Rev. , 2019, 48(6): 1531-1565
35. [35]
  Raeis H N, Lee J S. J. Electroceram. , 2017, 39(1/2/3/4): 223-238
36. [36]
  Wang C Y, Wang C, Meng F H, Wang P F, Wang S, Liang S J, Miao F. Adv. Electron. Mater. , 2019, 6(2): 1901107
37. [37]
  Xiao X Y, Hu J, Tang S, Yan K, Gao B, Chen H L, Zou D C. Adv. Mater. Technol. , 2020, 5(6): 1900914
38. [38]
  Chen Q Y, Lin M, Wang Z W, Zhao X L, Cai Y M, Liu Q, Fang Y C, Yang Y C, He M, Huang R. Adv. Electron. Mater. , 2019, 5(9): 1800852
39. [39]
  Zhou Y, Liu D N, Wang J H, Cheng Z Q, Liu L, Yang N, Liu Y X, Xia T, Liu X Y, Zhang X, Ye C, Xu Z, Xiong W, Chu P K, Yu X F. ACS Appl. Mater. Interfaces, 2020, 12(22): 25108-25114
40. [40]
  Yan X B, Wang K Y, Zhao J H, Zhou Z Y, Wang H, Wang J J, Zhang L, Li X Y, Xiao Z A, Zhao Q L, Pei Y F, Wang G, Qin C Y, Li H, Lou J Z, Liu Q, Zhou P. Small, 2019, 15(25): 1900107
41. [41]
  Shi Y Y, Liang X H, Yuan B, Chen V, Li H T, Hui F, Yu Z, Yuan F, Pop E, Wong H S P, Lanza M. Nat. Electron. , 2018, 1(8): 458-465
42. [42]
  Qian K, Nguyen V C, Chen T, Lee P S. J. Mater. Chem. C, 2016, 4(41): 9637-9645
43. [43]
  CHEN X P, HU S M, HU H L, YUE J L, KUANG Z J, HUANG X Z. Chinese J. Inorg. Chem. , 2020, 36(12): 2281-2288
44. [44]
  Wang C F, Wang C H, Huang Z L, Xu S. Adv. Mater. , 2018, 30(50): e1801368
45. [45]
  Aydın E B, Sezgintürk M K. TrAC Trends Anal. Chem. , 2017, 97: 309-315
46. [46]
  Granqvist C G, Hultaker A. Thin Solid Films, 2002, 411(1): 1-5
47. [47]
  Wang D T, Dai Y W, Xu J, Chen L, Sun Q Q, Zhou P, Wang P F, Ding S J, Zhang D W. IEEE Electron Device Lett. , 2016, 37(7): 878-881
48. [48]
  Ge J, Zhang S, Liu Z Y, Xie Z K, Pan S S. Nanoscale, 2019, 11(14): 6591-6601
49. [49]
  Raeis H N, Park Y, Lee J S. Adv. Funct. Mater. , 2018, 28(31): 1800553
50. [50]
  Xiong W, Zhu L Q, Ye C, Ren Z Y, Yu F, Xiao H, Xu Z, Zhou Y, Zhou H, Lu H L. Adv. Electron. Mater. , 2020, 6(5): 1901402
51. [51]
  Siddik A, Haldar P K, Garu P, Bhattacharjee S, Das U, Barman A, Roy A, Sarkar P K. J. Phys. D: Appl. Phys. , 2020, 53(29): 295103
52. [52]
  Ren S X, Li Z H, Tang L Z, Su X, Zhang H, Zhang G L, Zhang H, Cao G Z, Zhao J J. Adv. Electron. Mater. , 2020, 6(5): 2000151
53. [53]
  Shang J, Xue W, Ji Z, Liu G, Niu X, Yi X, Pan L, Zhan Q, Xu X H, Li R W. Nanoscale, 2017, 9(21): 7037-7046
54. [54]
  Qian K, Tay R Y, Nguyen V C, Wang J X, Cai G F, Chen T P, Teo E H T, Lee P S. Adv. Funct. Mater. , 2016, 26(13): 2176-2184
55. [55]
  Kim J H, Seong T Y, Ahn K J, Chung K B, Seok H J, Seo H J, Kim H K. Appl. Surf. Sci. , 2018, 440: 1211-1218
56. [56]
  Cui H N, Teixeira V, Monteiro A. Vacuum, 2002, 67(3/4): 589-594
57. [57]
  Boehme M, Charton C. Surf. Coat. Technol. , 2005, 200(1/2/3/4): 932-935
58. [58]
  Jung T, Kim S, Song P. Surf. Coat. Technol. , 2010, 205: S318-S323
59. [59]
  George J, Menon C S. Surf. Coat. Technol. , 2000, 132(1): 45-48
60. [60]
  Hamberg I, Granqvist C G. J. Appl. Phys. , 1986, 60(11): R123-R160
61. [61]
  Sawada Y, Kobayashi C, Seki S, Funakubo H. Thin Solid Films, 2002, 409(1): 46-50
62. [62]
  Hong S J, Han J I. Curr. Appl. Phys. , 2006, 6: e206-e210
63. [63]
  JIANG Z R. Development and Application of Materials, 2010, 25(4): 68-71
64. [64]
  QIU Y, CHEN Y F, ZU C K, JIN Y L. Advanced Ceramics, 2016, 37(5): 303-324
65. [65]
  LI X H, SONG K Q, CONG D L, ZHANG M, SUN C Y, WU H L, LI Z S. Surf. Technol. , 2020, 49(7): 126-132
66. [66]
  ZHANG S G, HUANG B Y, FANG X H. Mater. Rep. , 1997, 11(4): 11-14
67. [67]
  MA Y, KONG C Y. Journal of Chongqing University (Natural Science Edition), 2002, 25(8): 114-117
68. [68]
  CHENG L S, SUN B S, ZHONG J M, HE L J, WANG D X, CHEN H M. Rare Met. Lett. , 2008, 27(3): 10-16
69. [69]
  Kim H, Gilmore C M, Piqué A, Horwitz J S, Mattoussi H, Murata H, Kafafi Z H, Chrisey D B. J. Appl. Phys. , 1999, 86(11): 6451-6461
70. [70]
  Yang S M, Sun B S, Liu Y, Zhu J P, Song J X, Hao Z H, Zeng X Y, Zhao X, Shu Y C, Chen J, Yi Ji H, He J L. Ceram. Int. , 2020, 46(5): 6342-6350
71. [71]
  Thirumoorthi M, Thomas J P J. J. Asian Ceram. Soc. , 2018, 4(1): 124-132
72. [72]
  Wang Y, Zhu L J, Hu Y F, Deng Z B, Lou Z D, Hou Y B, Teng F. Opt. Express, 2017, 25(7): 7719-7729
73. [73]
  Abbas S, Kumar M, Kim J. Mater. Sci. Semicond. Process. , 2018, 88: 86-92
74. [74]
  Aleksandrova M, Kurtev N, Videkov V, Tzanova S, Schintke S. Microelectron. Eng. , 2015, 145: 112-116
75. [75]
  Zhang D, Tavakoliyaraki A, Wu Y, Swaaij R A C M M, Zeman M. Energy Procedia, 2011, 8: 207-213
76. [76]
  Kim S S, Yoon Y C, Kim K H. J. Electroceram. , 2003, 10(2): 95-101
77. [77]
  Won S J, Park J W, Lim K S, Kang S J, Hong Y H, Yang J H, Fang L, Sung G Y, Kim H K. Appl. Phys. Lett. , 2009, 95(13): 133508
78. [78]
  Kavehei O, Cho K, Lee S, Kim S, Alsarawi S F, Abbott D, Eshraghian K. 54th International Midwest Symposium on Circuits and Systems (MWSCAS). Seoul: IEEE, 2011: 1-4
79. [79]
  SUN B W, QIAN K, WANG Q P. Micro/nano Electronics and Intelligent Manufacturing, 2019, 1(4): 76-86
80. [80]
  Xue W H, Li Y, Liu G, Wang Z R, Xiao W, Jiang K M, Zhong Z C, Gao S, Ding J, Miao X S, Xu X H, Li R W. Adv. Electron. Mater. , 2019, 6(2): 1901055
81. [81]
  Yan X B, Li X Y, Zhou Z Y, Zhao J H, Wang H, Wang J J, Zhang L, Ren D L, Zhang X, Chen J S, Lu C, Zhou P, Liu Q. ACS Appl. Mater. Interfaces, 2019, 11(20): 18654-18661
82. [82]
  Zeng F J, Guo Y Y, Hu W, Tan Y Q, Zhang X M, Feng J L, Tang X S. ACS Appl. Mater. Interfaces, 2020, 12(20): 23094-23101
83. [83]
  Jaafar A H, Gray R J, Verrelli E, O'Neill M, Kelly S M, Kemp N T. Nanoscale, 2017, 9(43): 17091-17098
84. [84]
  Gao S, Liu G, Yang H L, Hu C, Chen Q L, Gong G D, Xue W H, Yi X H, Shang J, Li R W. ACS Nano, 2019, 13(2): 2634-2642
85. [85]
  Tan H W, Liu G, Yang H L, Yi X H, Pan L, Shang J, Long S B, Liu M, Wu Y H, Li R W. ACS Nano, 2017, 11(11): 11298-11305
86. [86]
  Huang W, Hang P J, Wang Y, Wang K, Han S H, Chen Z R, Peng W B, Zhu Y Y, Xu M S, Zhang Y Q, Fang Y J, Yu X G, Yang D R, Pi X D. Nano Energy, 2020, 73: 104790
87. [87]
  Xue W H, Ci W J, Xu X H, Liu G. Chin. Phys. B, 2020, 29(4): 048401
88. [88]
  ZHANG J Q, WU X F, MA X Y, YUAN L, HUANG K K, FENG S H. Chinese J. Inorg. Chem. , 2018, 34(4): 784-790
89. [89]
  Shang J, Liu G, Yang H L, Zhu X J, Chen X X, Tan H W, Hu B L, Pan L, Xue W H, Li R W. Adv. Funct. Mater. , 2014, 24(15): 2171-2179
90. [90]
  Qian K, Tay R Y, Lin M F, Chen J, Li H, Lin J, Wang J, Cai G, Nguyen V C, Teo E H, Chen T, Lee P S. ACS Nano, 2017, 11(2): 1712-1718
91. [91]
  Qian K, Cai G, Nguyen V C, Chen T, Lee P S. ACS Appl. Mater. Interfaces, 2016, 8(41): 27885-27891
92. [92]
  Qian K, Han X, Li H, Chen T, Lee P S. ACS Appl. Mater. Interfaces, 2020, 12(4): 4579-4585
93. [93]
  Sun B W, Han X, Xu R X, Qian K. ACS Appl. Electron. Mater. , 2020, 2(6): 1603-1608
94. [94]
  Huang J S, Lin Y C, Tsai H W, Yen W C, Chen C W, Lee C Y, Chin T S, Chueh Y L. Adv. Electron. Mater. , 2015, 1(8): 1500061
95. [95]
  Wang Y C, Hu L X, Wei X H, Zhuge F. Appl. Phys. Lett. , 2020, 116(22): 221602
96. [96]
  Chen P H, Yang H Y, Su Y T, Tsou C M. J. Micromech. Microeng. , 2020, 30(4): 045003
97. [97]
  Sawa A. Mater. Today, 2008, 11(6): 28-36
98. [98]
  Waser R, Dittmann R, Staikov G, Szot K. Adv. Mater. , 2009, 21(25/26): 2632-2663
99. [99]
  Zhou Z Y, Zhao J H, Chen A P, Pei Y F, Xiao Z A, Wang G, Chen J S, Fu G S, Yan X B. Mater. Horiz. , 2020, 7(4): 1106-1114
100. [100]
  Pei Y, Zhou Z, Chen A P, Chen J, Yan X. Nanoscale, 2020, 12(25): 13531-13539
101. [101]
  Matsukatova A N, Emelyanov A V, Minnekhanov A A, Sakharutov D A, Vdovichenko A Y, Kamyshinskii R A, Demin V A, Rylkov V V, Forsh P A, Chvalun S N, Kashkarov P K. Tech. Phys. Lett. , 2020, 46(1): 73-76
102. [102]
  Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y. IEEE Electron Device Lett. , 2013, 34(12): 1506-1508
103. [103]
  Lee S H, Park H L, Kim M H, Kang S, Lee S D. ACS Appl. Mater. Interfaces, 2019, 11(33): 30108-30115
104. [104]
  Zaheer M, Cai Y C, Waqas A B, Abbasi S F, Zhu G D, Cong C X, Qiu Z J, Liu R, Qin Y J, Zheng L R, Hu L G. Phys. Status Solidi RRL, 2020, 14(5): 2000050
105. [105]
  Kamarozaman N S, Aznilinda Z, Herman S H, Bakar R A, Rusop M. 10th IEEE International Conference on Semiconductor Electronics. Kuala Lumpur: IEEE, 2012: 703-706
106. [106]
  Wu S X, Ren L Z, Qing J, Yu F M, Yang K G, Yang M, Wang Y J, Meng M, Zhou W Q, Zhou X, Li S W. ACS Appl. Mater. Interfaces, 2014, 6(11): 8575-8579
107. [107]
  Xue Q, Wang Y C, Wei X H. Appl. Surf. Sci. , 2019, 479: 469-474
108. [108]
  Liu C Y, Shih Y R, Huang S J. Solid State Commun. , 2013, 159: 13-17
109. [109]
  Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbe C, Rizk R, Kenyon A. J. Nanotechnol. , 2012, 23(45): 455201
110. [110]
  Tan Z H, Yang R, Terabe K, Yin X B, Zhang X D, Guo X. Adv. Mater. , 2016, 28(2): 377-384
111. [111]
  Chen P H, Chang K C, Chang T C, Tsai T M, Pan C H, Chu T J, Chen M C, Huang H C, Lo I, Zheng J C, Sze S M. IEEE Electron Device Lett. , 2016, 37(3): 280-283
112. [112]
  Chiang K K, Chen J S, Wu J J. ACS Appl. Mater. Interfaces, 2012, 4(8): 4237-45
113. [113]
  Lin C Y, Chang K C, Chang T C, Tsai T M, Pan C H, Zhang R, Liu K H, Chen H M, Tseng Y T, Hung Y C, Syu Y E, Zheng J C, Wang Y L, Zhang W, Sze S M. IEEE Electron Device Lett. , 2015, 36(6): 564-566
114. [114]
  Pan C H, Chang T C, Tsai T, Chang K C, Chu T J, Shih C C, Lin C Y, Chen P H, Wu H Q, Deng N, Qian H, Sze S M. IEEE Trans. Electron Devices, 2016, 63(12): 4737-4743
115. [115]
  Zhao Y Y, Sun W J, Wang J, He J H, Li H, Xu Q F, Li N J, Chen D Y, Lu J M. Adv. Funct. Mater. , 2020, 30(39): 2004245
116. [116]
  Zhou L, Yang S W, Ding G Q, Yang J Q, Ren Y, Zhang S R, Mao J Y, Yang Y C, Zhou Y, Han S T. Nano Energy, 2019, 58: 293-303
117. [117]
  Goswami S, Rath S P, Thompson D, Hedstrom S, Annamalai M, Pramanick R, Ilic B R, Sarkar S, Hooda S, Nijhuis C A, Martin J, Williams R S, Goswami S, Venkatesan T. Nat. Nanotechnol. , 2020, 15(5): 380-389
118. [118]
  Lubben M, Karakolis P, Ioannou S V, Normand P, Dimitrakis P, Valov I. Adv. Mater. , 2015, 27(40): 6202-6207
119. [119]
  Lanza M, Wong H S P, Pop E, Ielmini D, Strukov D, Regan B C, Larcher L, Villena M A, Yang J J, Goux L, Belmonte A, Yang Y C, Puglisi F M, Kang J F, Magyari Kope B, Yalon E, Kenyon A, Buckwell M, Mehonic A, Shluger A, Li H T, Hou T H, Hudec B, Akinwande D, Ge R J, Ambrogio S, Roldan J B, Miranda E, Sune J, Pey K L, Wu X, Raghavan N, Wu E, Lu W D, Navarro G, Zhang W D, Wu H Q, Li R W, Holleitner A, Wurstbauer U, Lemme M C, Liu M, Long S B, Liu Q, Lv H B, Padovani A, Pavan P, Valov I, Jing X, Han T T, Zhu K C, Chen S C, Hui F, Shi Y Y. Adv. Electron. Mater. , 2019, 5(1): 1800143
120. [120]
  de Jong M P, Simons D P L, Reijme M A, van Ijzendoorn L J, van der Gon A W D, de Voigt M J A, Brongersma H H, Gymer R W. Synth. Met. , 2000, 110(1): 1-6
121. [121]
  Lee S T, Gao Z Q, Hung L S. Appl. Phys. Lett. , 1999, 75(10): 1404-1406
122. [122]
  Gallardo D E, Bertoni C, Dunn S, Gaponik N, Eychmüller A. Adv. Mater. , 2007, 19(20): 3364-3367
123. [123]
  Wu X J, Xu H H, Wang Y, Rogach A L, Shen Y Z, Zhao N. Semicond. Sci. Technol. , 2015, 30(7): 074002
124. [124]
  Busby Y, Crespo M N, Girleanu M, Brinkmann M, Ersen O, Pireaux J J. Org. Electron. , 2015, 16: 40-45
125. [125]
  Yang Y C, Huang R. Nat. Electron. , 2018, 1(5): 274-287
126. [126]
  Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S, Waser R, Valov I, Lu W D. Nat. Commun. , 2014, 5: 4232
127. [127]
  Kumar D, Aluguri R, Chand U, Tseng T Y. Nanotechnol. , 2018, 29(12): 125202
128. [128]
  Chen Y S, Lee H Y, Chen P S, Wu T Y, Wang C C, Tzeng P J, Chen F, Tsai M J, Lien C. IEEE Electron Device Lett. , 2010, 31(12): 1473-1475
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6. [6]
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7. [7]
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