Citation: WU Xiao-Feng, YUAN Long, HUANG Ke-Ke, FENG Shou-Hua. Memristive Effects in Inorganic Solid Materials[J]. Chinese Journal of Inorganic Chemistry, ;2015, 31(9): 1726-1738. doi: 10.11862/CJIC.2015.254 shu

Memristive Effects in Inorganic Solid Materials

1.
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China

Corresponding author: FENG Shou-Hua,
Received Date: 16 June 2015
Available Online: 30 July 2015
Fund Project: 国家自然科学基金(No.21427802,21131002,21201075)资助项目。 (No.21427802,21131002,21201075)

Crystal defects are fundamental issues that define the physical and chemical properties in inorganic solid state chemistry. Memristive effects, which are mainly controlled by defects migration in solid state, will bring new revolution to the future electronic information industry. In this review, recent progress of memrisive effect in inorganic solid state materials was summarized. Main mechanism and material types are discussed in detail. These phenomena are highly related to atomic-scale p-n junction in manganite. This review indicates that defect transport mechanism study in electric field is an very important aspects in memristive applications.
- memristor;memristive mechanism;defect modulate;atomic scale p-n junction
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