Citation: DENG Rui-Ping, ZHOU Liang, LI Lei-Jiao, ZHANG Hong-Jie. Indium Tin Oxide Anode Self-Assembled Monolayer Modification for Device Performance Improvement of Organic Light-Emitting Diodes[J]. Chinese Journal of Inorganic Chemistry, ;2015, 31(9): 1839-1846. doi: 10.11862/CJIC.2015.242 shu

Indium Tin Oxide Anode Self-Assembled Monolayer Modification for Device Performance Improvement of Organic Light-Emitting Diodes

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State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Corresponding author: ZHOU Liang, ZHANG Hong-Jie,
Received Date: 29 May 2015
Available Online: 17 July 2015
Fund Project: 科技部"973"计划(No.2014CB643802) (No.2014CB643802)国家自然科学基金创新群体(No.21221061) (No.21221061)中国科学院青年创新促进会项目(No.2013150) (No.2013150)吉林省科技发展计划项目(No.20130522125JH)资助项目。 (No.20130522125JH)

A novel alkoxysilane (Cz-Si) was synthesized and used as an active reagent for self-assembled monolayer (SAM) modification on indium tin oxide (ITO) surface. The as-prepared Cz-Si could modify the ITO surface successfully under the mild atmosphere without any protection, offering simple and easy experimental operation. To investigate the effect of SAM modification on the device performances, based on ITO/SAM anodes, a series of organic light-emitting diodes (OLEDs) were fabricated: ITO/SAM (or unmodified)/NPB (40~50 nm)/Alq₃ (60 nm)/LiF (1.0 nm)/Al. The devices show improvement compared to their counterparts with bare ITO anodes. The improvement could be attributed to the modulating of the electronic energy, surface roughness and interface integrity at the ITO/hole transporting layer (HTL) interface by SAM modification.
- ITO modification;self-assembled monolayer (SAM);organic light-emitting diodes (OLEDs)
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沈阳化工大学材料科学与工程学院沈阳 110142