Citation: ZHAI Hua-Song, YU Chun-Yan, GAO Ang, JIANG Wu, WANG Kun-Peng, XU Bing-She. Effect of Different Metal Buffer Layer on Optical and Electrical Properties of GaN Films[J]. Chinese Journal of Inorganic Chemistry, ;2014, 30(3): 597-602. doi: 10.11862/CJIC.2014.088 shu

Effect of Different Metal Buffer Layer on Optical and Electrical Properties of GaN Films

ZHAI Hua-Song ^1,2 ,
YU Chun-Yan ^1,2 ,
GAO Ang ³ ,
JIANG Wu ³ ,
WANG Kun-Peng ^1,2 ,
XU Bing-She ^1,2

1.
1 Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;

Received Date: 26 September 2013
Available Online: 13 November 2013
Fund Project: 国家自然科学基金(No.51002102) (No.51002102)山西省科技创新重点团队项目(No.2012041011)资助项目。 (No.2012041011)

GaN micron films were prepared on Si(100) substrate with Al, Ni and Fe metal buffer layer by chemical vapor deposition method (CVD), in which metal Ga and NH₃ as source materials. The GaN micron films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), photoluminescence (PL) and hall effect measurement system (HMS-3000) etc. The results indicate that all samples are hexagonal wurtzite structure, show strong near-band-edge UV emission peaks and red light emission peaks with center wavelength of 672 nm. The electrical properties of samples are quite different. Finally the possible formation mechanisms of GaN micron films were proposed.
- GaN micron films;metal buffer layer;chemical vapor deposition (CVD)
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