Citation:
ZHAI Hua-Song, YU Chun-Yan, GAO Ang, JIANG Wu, WANG Kun-Peng, XU Bing-She. Effect of Different Metal Buffer Layer on Optical and Electrical Properties of GaN Films[J]. Chinese Journal of Inorganic Chemistry,
;2014, 30(3): 597-602.
doi:
10.11862/CJIC.2014.088
-
GaN micron films were prepared on Si(100) substrate with Al, Ni and Fe metal buffer layer by chemical vapor deposition method (CVD), in which metal Ga and NH3 as source materials. The GaN micron films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), photoluminescence (PL) and hall effect measurement system (HMS-3000) etc. The results indicate that all samples are hexagonal wurtzite structure, show strong near-band-edge UV emission peaks and red light emission peaks with center wavelength of 672 nm. The electrical properties of samples are quite different. Finally the possible formation mechanisms of GaN micron films were proposed.
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[1]
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-
[1]
[1] Hu X, Tarakji A, Simin G, et al. Appl. Phys. Lett., 2000,77 (9):1339-1341
-
[2]
[2] Huang C, Song J, Lee W, et al. J. Am. Chem. Soc., 2010, 132:4766-4771
-
[3]
[3] Tomioka K, Motohisa J, Hara S, et al. Nano Lett., 2010,10(5): 1639-1644
-
[4]
[4] Zhong Z H, Qian F, Wang D L, et al. Nano Lett., 2003,3 (3):343-346
-
[5]
[5] Schwarz U T, Pindl M, Wegscheider W, et al. Appl. Phys. Lett., 2005,86(16):161112-161115
-
[6]
[6] Qian F, Li Y, Gradecak S, et al. Nat. Mater., 2008,7:701-706
-
[7]
[7] Johnson J C, Choi H J, Knutsen K P, et al. Nat. Mater., 2002, 1:106-110
-
[8]
[8] Schwarz U T, Markus P, Werner W, et al. Appl. Phys. Lett., 2005,86(16):161112-161115
-
[9]
[9] Tang Y B, Chen Z H, Song H S, et al. Nano Lett., 2008,8 (12):4191-4195
-
[10]
[10] FENG Qian(冯倩), DUAN Meng(段猛), HAO Yue(郝跃). Acta Photonica Sinica(光子学报), 2003,32(11):1340-1342
-
[11]
[11] Kapolnek D, Wu X H, Heying B, et al. Appl. Phys. Lett., 1995,67(11):1541-1543
-
[12]
[12] Wong Y Y, Chang E Y, Yang T H, et al. J. Cryst. Growth, 2009,311(6):1487-1492
-
[13]
[13] Nakamura S J. J. Appl. Phys, 1991,30:1705-1707
-
[14]
[14] Davis R F, Gehrke T, Linthicum K J. J. Cryst. Growth, 2001, 231:335-341
-
[15]
[15] Gu S, Zhang R, Shi Y, et al. Appl. Phys. A, 2002,74:537-540
-
[16]
[16] Gerlach J W, Hoche T, Frost F, et al. Thin Solid Films, 2004,459(1-2):13-16
-
[17]
[17] LIANG Jian(梁建), ZHAO Dan(赵丹), ZHAO Jun-Fu(赵君 芙), et al. J. Funct. Mater.(功能材料), 2011,42:599-603
-
[18]
[18] ZHUANG Hui-Zhao(庄惠照), HU Li-Jun(胡丽君), XUE Chen-Shan(薛成山), et al. J. Funct. Mater.(功能材料), 2008, 39(2):331-333
-
[19]
[19] Chen C C, Yeh C C, Chen C H, et al. J. Am. Chem. Soc., 2001,123(12):2791-2798
-
[20]
[20] Nishida T, Kobayashi N. Phys. Status Solidi, 2001,188(1):113 -116
-
[21]
[21] ZHU Lin(朱琳), YU Chun-Yan(余春燕), LIANG Jian(梁建), et al. Chinese J. Inorg. Chem.(无机化学学报), 2013,29(1): 63-68
-
[22]
[22] LAI Tian-Shu(赖天树), WANG Jia-Hui(王嘉辉), ZHANG Li-Li(张莉莉), et al. Acta Optica Sinica(光学学报), 2003, 23(12):1493-1496
-
[23]
[23] FENG Fei-Fei(封飞飞), LIU Jun-Lin(刘军林), QIU Chong (邱冲), et al. Acta Phys. Sin.(物理学报), 2010,59(8):5706-5709
-
[24]
[24] Kirilyuk V, Zauner A R A, Christianen P C M, et al. Appl. Phys. Lett., 2000,76(17):2355-2357
-
[25]
[25] Huang C T, Song J H, Lee W F, et al. J. Am. Chem. Soc., 2010,132(13):4766-4771
-
[26]
[26] Low L L, Yam F K, Beh K P, et al. Appl. Surf. Sci., 2011, 258(1):542-546
-
[27]
[27] Kang S, Kang B K, Kim S W, et al. Cryst. Growth Des, 2010,10(6):2581-2584
-
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