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Citation: JI Shan-Shan, MEI Yan-Xia, ZHANG Jin-Qiu, YANG Pei-Xia, LIAN Ye, AN Mao-Zhong. Fabrication of CuInxGa1-xSe2 Thin Films via Electrodeposition Method with Ionic Liquid Electrolytes[J]. Chinese Journal of Inorganic Chemistry, ;2014, (2): 466-472. doi: 10.11862/CJIC.2014.036 shu

Fabrication of CuInxGa1-xSe2 Thin Films via Electrodeposition Method with Ionic Liquid Electrolytes

  • 1.

    State Key Laboratory of Urban Water Resource and Environment, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China

  • Corresponding author: AN Mao-Zhong, 
  • Received Date: 3 September 2013
    Available Online: 14 October 2013

    Fund Project:

  • The electrochemical behavior of CuInxGa1-xSe2 (CIGS) was investigated by cyclic voltammetry (CV) in ionic liquid Reline. The insertion of indium (In) into the CISthin films involved two routes: co-deposition with Cu2+ and Se or trivalent indium ion (In3+). The insertion of gallium (Ga) into the quaternary solid phase (Cu-In-Ga-Se) utilized two routes: co-deposition (with Cu2+, In3+, Se4+) and Ga3+ directly added to Ga. The effects of electrodeposition potential, bath temperature and main salt concentration on CIGSthin films were researched. Cu1.00In0.78Ga0.27Se2.13 thin films were obtained and satisfactory control of film composition and Ga/(Ga+In) was achieved by the choice of process parameters. The standard CIGSsample was calibrated by an inductively coupled plasma optical emission. The morphological properties were detected by scanning electron microscopy. The XRDresult shows that the incorporation of Ga into CISphase and forms CIGSphase.
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