Citation: Yu Ming ZHAO, Ke Yan ZHOU, Yun Cheng YUAN. Preparation of GaN Powder of Nanometer Scale by MOCVD Using DEGA as Precursor[J]. Chinese Chemical Letters, ;1997, 8(2): 185-188. shu

Preparation of GaN Powder of Nanometer Scale by MOCVD Using DEGA as Precursor

Department of Chemistry, Delian University of Technology, Delian 116012

Received Date: 23 August 1996

GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor.The resulting powder was characterized by XRD and TEM.It has been found that the particle size of the powder obtabed is affected by the deposition temperature,and the fine crystals formed m temperature range 500~650℃ were hexagonal.
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