Citation: . RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*[J]. Chinese Journal of Polymer Science, ;1999, 17(1): 49-55. shu

RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*

Received Date: 10 October 1997

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell,were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×101～ 1 .0×105 for the rectifyingratio at 3V, n = 3 ～12 for the ideal factor,j0 = 8.0×10-5～5.6×10-2 mA/cm2 for the reversed saturated current density,and φb=0.67～0.83 V for the barrier height,respectively.The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (γ=1.0×105 at 3V ),output current(>1500mA/cm2 at 3V ) and lower ideal factor(n=3.3)was obtained by preventing the oxidation of PS before evaporating Al electrode.
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