Citation: Chen Huajie. Recent Advances in High-Mobility Polymeric Semiconductor Materials[J]. Chinese Journal of Organic Chemistry, ;2016, 36(3): 460-479. doi: 10.6023/cjoc201511026 shu

Recent Advances in High-Mobility Polymeric Semiconductor Materials

Chen Huajie ^*,,

1.
Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, Key Laboratory of Advanced Functional Polymeric Materials of College of Hunan Province, College of Chemistry, Xiangtan University, Xiangtan 411105

Corresponding author: Chen Huajie, chenhjoe@163.com
Received Date: 15 November 2015
Revised Date: 30 December 2015

Fund Project: the Natural Science Foundation of Hunan Province 2015JJ3122the China Postdoctoral Science Foundation 2015T80877the National Natural Science Foundation of China 51403177the China Postdoctoral Science Foundation 2014M552141the Science and Technology Planning Project of Hunan Province 2015RS4025

Figures(9)

Significant progress has been made in polymeric semiconductors and their organic field-effect transistors (OFETs) since 1980s. To date, hundreds of polymeric semiconductors have been reported and used for OFETs. The hole mobility above 36.3 cm²·V^-1·s^-1 has been achieved, which can be competitive with organic small semiconductors and even amorphous silicon. In this review, the recent progress in high-mobility polymeric semiconductor materials has been summarized from the perspective of design, synthesis, and OFET devices performance. Moreover, the recent developments are systematically summarized and analyzed according to different types of polymeric semiconductors, including p-type, n-type, and ambipolar polymeric semiconductors. The analysis about the relationship among the molecular structure-aggregation structure-OFET devices performance may guide the rational molecule design in the polymeric semiconductor materials with excellently comprehensive performance in the future.
- organic field-effect transistors,
- polymer semiconductors,
- high mobility,
- air stability
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南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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