Citation: LIU Lin, LI Zhi-Sheng, HU Hui-Dong, SONG Wei-Li. Insight into Macroscopic Metal-Assisted Chemical Etching for Silicon Nanowires[J]. Acta Physico-Chimica Sinica, ;2016, 32(4): 1019-1028. doi: 10.3866/PKU.WHXB201602183 shu

Insight into Macroscopic Metal-Assisted Chemical Etching for Silicon Nanowires

LIU Lin ^1,2,, ,
LI Zhi-Sheng ¹ ,
HU Hui-Dong ¹ ,
SONG Wei-Li ³

1.
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206, P. R. China;
2.
2. Beijing Key Laboratory of Energy Conversion and Storage Materials, Beijing Normal University, Beijing 100875, P. R. China;
3.
3. Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China

Corresponding author: LIU Lin,
Received Date: 30 December 2015
Available Online: 15 February 2016
Fund Project: 中国博士后科学基金面上项目(2014M560934) (2014M560934)中央高校基本科研业务费项目(2015QN16)资助 (2015QN16)

To understand the principles of the fabrication of nanowire arrays using macroscopic metal-assisted chemical etching (MACE), Si nanowires (SiNWs) are synthesized using Ag-coated Si substrates and Pt electrodes by the macroscopic MACE. Analysis of the SiNWmorphology coupled with the corresponding current density in the MACE process is applied to systematically investigate the effects of the electrical connection, Ag coating, etching conditions, Si substrates, and light irradiation on the formation of SiNWs. It is found that there is a certain relationship between the current density and the SiNWlength. Amode is proposed to fundamentally understand the mechanisms of the preparation of SiNWs using MACE. Associated opportunities are also discussed.
- Semiconductor,
- Microstructure,
- Electrochemistry,
- Silicon nanowire,
- Metal etching
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