Citation: LI Hui, LIU Xiang-Xin, ZHANG Yu-Feng, DU Zhong-Ming, YANG Biao, HAN Jun-Feng, BESLAND Marie-Paule. Synthesis of CdS with Large Band Gap Values by a Simple Route at Room Temperature[J]. Acta Physico-Chimica Sinica, ;2015, 31(7): 1338-1344. doi: 10.3866/PKU.WHXB201504301 shu

Synthesis of CdS with Large Band Gap Values by a Simple Route at Room Temperature

1.
1 The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China;
2 School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China;
3 Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France

Received Date: 10 December 2014
Available Online: 30 April 2015
Fund Project: 国家自然科学基金(51472239, 61274060) (51472239, 61274060) 中国科学院青年促进会基金(Y410421C41) (Y410421C41) 中国科学院百人计划(Y010411C41) (Y010411C41)中国科学院百人择优支持项目(Y210431C41)资助 (Y210431C41)

We report the synthesis of CdS polycrystalline thin films deposited with 0%, 0.88%, 1.78%, 2.58%, and 3.40% (volume fraction, φ) O₂ in sputtering Ar gas using a radio frequency magnetron sputtering method. The obtained CdS samples were characterized by X-ray diffraction, scanning electron microscope, Raman spectroscopy, ultraviolet-visible (UV-Vis) absorption spectroscopy, and X-ray photoelectron spectroscopy. O incorporation led to the formation of compact and small CdS grains. The band gap values of the CdS thin films deposited with 0.88%and 1.78% O₂ were 2.60 and 2.65 eV, respectively, and were larger than that of CdS (2.48 eV) deposited without O₂ gas in sputtering Ar gas. In contrast, the band gap values of the CdS thin films deposited with 2.58% and 3.40% O₂ (2.50 and 2.49 eV, respectively) were consistent with that of CdS (2.48 eV) deposited without O₂ gas in sputtering Ar+O₂ gas. The CdS thin film deposited with 0.88% O₂ displayed the highest crystalline quality. Subsequently, CdTe thin films were deposited by radio frequency magnetron sputtering method on the surface of the CdS thin films. The CdTe thin films were characterized before and after high-temperature anneal treatment in a CdCl₂ atmosphere. The results showed that O incorporation into CdS led to the formation of considerably more closely packed and larger CdTe grains. The synthesis of CdS with large band gap values at room temperature is facile and effective using the current method. Therefore, the method presented herein is very promising for large-scale industrial production.
- CdS,
- O incorporation,
- Magnetron sputtering,
- CdTe,
- Solar cell
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