Citation: YIN Hai-Feng, ZHANG Hong, YUE Li. Near-Infrared Plasmon Study on N-Doped Hexa nal Graphene Nanostructures[J]. Acta Physico-Chimica Sinica, ;2014, 30(6): 1049-1054. doi: 10.3866/PKU.WHXB201404092
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Near-infrared plasmons in N-doped hexa nal graphene nanostructures were investigated using time-dependent density functional theory. Along a certain direction, N-doped hexa nal graphene nanostructures with a side length of 1 nm have more intense plasmon resonances throughout the nearinfrared spectral region. The electrons that participate in these near-infrared plasmon resonances oscillate back and forth between the center and edge regions of the hexa nal nanostructures. The formation of a near-infrared plasmon resonance mode depends on the nitrogen-doping position and the scale size of the graphene nanostructure. It is only when the nitrogen-doped location is close to the edge of the nanostructures, near-infrared plasmon resonance mode of the graphene nanostructure will be formed. For N-doped hexa nal graphene nanostructures with a side length of less than 1 nm, there is no plasmon resonance in the nearinfrared spectral region.
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