Citation: CHENG Hui, YAO Jiang-Hong, CAO Ya-An. Photoelectric Conversion Efficiency of N719/TiO₂-Inx%/FTO Film Electrodes Incorporating In Doped at the TiO₂ Surface[J]. Acta Physico-Chimica Sinica doi: 10.3866/PKU.WHXB201207301 shu

Photoelectric Conversion Efficiency of N719/TiO₂-Inx%/FTO Film Electrodes Incorporating In Doped at the TiO₂ Surface

CHENG Hui ^1,2 ,
YAO Jiang-Hong ^1,2 ,
CAO Ya-An ^1,2,

1.
1. College of Physics, Nankai University, Tianjin 300071, P. R. China;
2. The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics School, Nankai University, Tianjin 300457, P. R. China

Received Date: 7 June 2012
Available Online: 30 July 2012
Fund Project: 国家自然科学基金(50872056, 51072082, 21173121)资助项目 (50872056, 51072082, 21173121)

Nanoparticles of TiO₂ with surface modification by In doping were prepared using a sol-gel technique. These materials had the general formula TiO₂-Inx%, where x represents the mole percent of In3+ ions in the combined In³⁺ and Ti⁴⁺ metal ion content. N719/TiO₂/FTO (fluorine doped tin oxide) and N719/ TiO₂-Inx%/FTO film electrodes were prepared, using N719 dye as a sensitizing agent. These thin film electrodes were incorporated into solar cells composed of 0.5 mol·L^-1 LiI, 0.05 mol·L^-1 I₂, methoxypropionitrile (MPN) and Pt. It was determined that the photoelectric conversion efficiencies of the N719/TiO₂-Inx%/FTO film electrodes were higher than that of N719/TiO₂/FTO. In particular, the conversion efficiency of N719/TiO₂-In0.1%/FTO was 20% greater than that of N719/TiO₂/FTO. The band structure and In³⁺ ion content of TiO₂-Inx% samples were analyzed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and optical diffuse-reflection spectroscopy (DRS), as well as by examination of photoluminescence (PL) and surface photocurrent action spectra. The photo-induced charge transfer processes of the N719/TiO₂-Inx%/FTO film electrodes were also elucidated using surface photocurrent action spectra. The results showed that O-In-Cl_n (where n=1 or 2) species were formed at the TiO₂ surface, with surface state energy levels 0.3 eV below the conduction band of TiO₂. The surface state energy levels of these species effectively inhibit the recombination of photo-generated carriers during the photocurrent generation process, and also serve to increase the anodic photocurrent and significantly improve the photoelectric conversion efficiency of N719/TiO₂-Inx%/FTO thin film electrodes. This work also discusses the interfacial light-induced charge transfer mechanisms in these materials.
- TiO₂-Inx%,
- O-In-Cln (n=1, 2) species,
- Surface-sensitization,
- N719/TiO₂-Inx%/FTO,
- Photoelectric conversion efficiency
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Photoelectric Conversion Efficiency of N719/TiO2-Inx%/FTO Film Electrodes Incorporating In Doped at the TiO2 Surface

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通讯作者: 陈斌, bchen63@163.com

Photoelectric Conversion Efficiency of N719/TiO₂-Inx%/FTO Film Electrodes Incorporating In Doped at the TiO₂ Surface