Citation:
PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke. Preparation and Photoelectrochemical Performance of BiVO4 Film Electrode[J]. Acta Physico-Chimica Sinica,
;2011, 27(09): 2160-2166.
doi:
10.3866/PKU.WHXB20110913
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A BiVO4 film electrode was prepared using a home-made BiVO4 nanopowder and the effects of annealing temperature and film thickness on its photoelectrochemical behavior, electron transport and recombination in the BiVO4 electrode were systematically studied by electrochemical techniques. Experimental results indicate that the annealing temperature and film thickness can significantly influence the photoelectrochemical characteristics of the BiVO4 electrode. At low annealing temperature (≤500 °C) the photoelectrochemical activity improved upon increasing the temperature and the optimal activity was obtained for the electrode annealed at 500 ° C. At high temperature (>500 ° C) the photoelectrochemical activity decreased because of a marked increase of bulk traps in the electrode. The BiVO4 electrode showed od photon-to-electron conversion efficiency under visible light and its bandgap was found to be 2.36 eV based on an incident monochromatic photon-to-electric conversion efficiency curve. The flat-band potential (Efb) of BiVO4 was determined to be -0.7 V (vs Ag/AgCl) by the Mött Schottky method. These results give an important reference for the optimization of the BiVO4 photocatalytic system.
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