Citation: PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke. Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode[J]. Acta Physico-Chimica Sinica, ;2011, 27(09): 2160-2166. doi: 10.3866/PKU.WHXB20110913 shu

Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode

1.
College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, P. R. China

Received Date: 6 April 2011
Available Online: 11 July 2011
Fund Project: 国家自然科学基金(20871096, 20973128) (20871096, 20973128) 教育部新世纪优秀人才计划(NCET-07-0637) (NCET-07-0637)高校基本科研业务基金(2081003)资助 (2081003)

A BiVO₄ film electrode was prepared using a home-made BiVO₄ nanopowder and the effects of annealing temperature and film thickness on its photoelectrochemical behavior, electron transport and recombination in the BiVO₄ electrode were systematically studied by electrochemical techniques. Experimental results indicate that the annealing temperature and film thickness can significantly influence the photoelectrochemical characteristics of the BiVO₄ electrode. At low annealing temperature (≤500 °C) the photoelectrochemical activity improved upon increasing the temperature and the optimal activity was obtained for the electrode annealed at 500 ° C. At high temperature (>500 ° C) the photoelectrochemical activity decreased because of a marked increase of bulk traps in the electrode. The BiVO₄ electrode showed od photon-to-electron conversion efficiency under visible light and its bandgap was found to be 2.36 eV based on an incident monochromatic photon-to-electric conversion efficiency curve. The flat-band potential (E_fb) of BiVO₄ was determined to be -0.7 V (vs Ag/AgCl) by the Mött Schottky method. These results give an important reference for the optimization of the BiVO₄ photocatalytic system.
- BiVO₄ film electrode,
- Photoelectrochemical performance,
- Transient photocurrent spectrum,
- Flat-band potential
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沈阳化工大学材料科学与工程学院沈阳 110142

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Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode