Citation: XU Yu-Qun, ZHANG Jun, YUAN Bing-Kai, DENG Ke, YANG Rong, QIU Xiao-Hui. Electric Field Assisted Hopping of Tert-Butylamine on Cu(111) Surface[J]. Acta Physico-Chimica Sinica, ;2010, 26(10): 2686-2690. doi: 10.3866/PKU.WHXB20101012 shu

Electric Field Assisted Hopping of Tert-Butylamine on Cu(111) Surface

1.
National Center for Nanoscience and Technology, Beijing 100190, P. R. China

Received Date: 13 June 2010
Available Online: 27 September 2010
Fund Project: 国家重点基础研究发展计划项目(973)(2006CB921502) (973)(2006CB921502)中国科学院知识创新工程项目(KJCX2-YW-M04)资助 (KJCX2-YW-M04)

The lateral hopping of tert-butylamine (t-BA) molecules ona Cu(111) surface was studied by scanning tunneling microscopy (STM) at 78 K. The hopping probabilities of the molecules in the tunneling junction were found to depend linearly on the applied tunneling current, indicating a single electron-induced process. Hopping probabilities under an electric field of opposite polarity was found to be different. This non-equivalence is attributed to an electric field assisted diffusion where the adsorption energy and the diffusion barrier of the t-BA molecule are different when the polar molecule is subjected to opposite electric fields.
- Scanning tunneling microscope,
- Single molecule,
- Hopping phenomenon,
- Electronic excitation,
- Electric field in a tunneling junction
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沈阳化工大学材料科学与工程学院沈阳 110142