Citation:
	            
		            WANG  Shuo, LUO  Chong, ZHAO  Ying, XIONG  Shao-Zhen. Al-Induced Crystallization of Polycrystalline Silicon Thin Films Based on Solution Method[J]. Acta Physico-Chimica Sinica,
							;2008, 24(09): 1689-1693.
						
							doi:
								10.3866/PKU.WHXB20080928
						
					
				
					
				
	        
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	                	A new low-cost method to prepare polycrystalline silicon thin films by solution-based aluminum-induced crystallization (AIC) was introduced in this article. Amorphous silicon (a-Si) thin films with 50 nm thickness were deposited by low-pressure chemical vapor deposition (LPCVD) and used as the precursors of crystallization. Aluminate solution with several components was spun on the surface of the a-Si films. Crystallization was accomplished at the annealing temperature between 550 and 620 ℃ for several hours in furnace and N2 ambience. The crystallization effect was dependent on the aluminumconcentration in aluminate solution and the surface status of the studied a-Si films. We found that the AIC process could take place only with solution containing meta-aluminates, and continuous polycrystalline silicon thin films could be obtained if the solution concentration was not too low. The natural oxide layers on the surface of a-Si films were od for adhesion of aluminate solution to the films and the formation of larger grains, but would lead to a higher crystallization temperature. In addition, various micrographic patterns taken fromthe crystallized films were observed, which were resulted from different kinds of Al-salt solution as the source for AIC. In one word, it was important to choose appropriate experiment parameters.
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