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Citation: CHEN Yang, JING Fen-Ning, YE Wei-Chun, WANG Chun-Ming. Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)[J]. Acta Physico-Chimica Sinica, ;2007, 23(11): 1743-1746. doi: 10.3866/PKU.WHXB20071117 shu

Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)

1.
College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, P. R. China

Received Date: 18 April 2007
Available Online: 17 September 2007

The autocatalytic electroless deposition (AED) of palladiumonto p-silicon (100) with hydrogen termination was studied. Pd films were prepared by immersing the hydrogen-terminated silicon wafers into conventional HF-PdCl2-HCl solution at room temperature. The anodic stripping behaviors and morphologies of the Pd deposits were studied using cyclic voltammetry (CV), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed that the Pd growth was in Volmer-Weber (VW) mode and the Pd filmhad od adhesion.
- Autocatalytic electroless deposition; Anodic stripping; Palladium; Atomic force microscopy; p-Silicon (100)
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