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Citation: GE Xiu-Tao, FANG Da-Ru, LIU Xing-Qin. The Preparation and Gas-sensing Properties of Ga₂O₃-NiO Complex Oxide by Sol-gel Method[J]. Acta Physico-Chimica Sinica, ;2005, 21(01): 10-15. doi: 10.3866/PKU.WHXB20050103 shu

The Preparation and Gas-sensing Properties of Ga₂O₃-NiO Complex Oxide by Sol-gel Method

1.
Department of Chemistry, Chuzhou University, Anhui　239012; Department of Materials Science and Engineering University of Science and Technology of China, Hefei　230026

Received Date: 10 May 2004
Available Online: 15 January 2005

Ga2O3-NiO Complex Oxide gas-sensing materials were prepared by sol-gel method. Effects of heat-treatment temperature and different n(Ni2＋) : n(Ga3＋) ratios on the phase constituents were characterized by XRD, IR and ICP, respectively. The conductance-temperature and gas-sensing properties of Ga2O3-NiO were investigated. The results demonstrate that pure phase NiGa2O4 can be obtained when the ratio of Ni2＋ to Ga3＋(n(Ni2＋) : n(Ga3＋)) is 0.7～0.9 : 2 and heat-treatment is carried out at 800 ℃ for 4 hours. Because of the reaction GaNi×→GaNi’＋h●, NiGa2O4 is a p-type semiconductor and exhibits high sensitivity and od selectivity to C2H5OH.
- Sol-gel;NiGa₂O₄;Conductance;C₂H₅OH;Gas-sensing properties
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The Preparation and Gas-sensing Properties of Ga2O3-NiO Complex Oxide by Sol-gel Method

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通讯作者: 陈斌, bchen63@163.com

The Preparation and Gas-sensing Properties of Ga₂O₃-NiO Complex Oxide by Sol-gel Method