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Citation: Ouyang Jian-Hua, Wu Nian-Zu, Zhao Xin-Sheng. The Role of Sulfite in the Wetting Etching of Silicon and Silica[J]. Acta Physico-Chimica Sinica, ;2004, 20(06): 612-615. doi: 10.3866/PKU.WHXB20040612 shu

The Role of Sulfite in the Wetting Etching of Silicon and Silica

1.
State Key Laboratory for Structural Chemistry of Unstable and Stable Species;Department of Chemical Biology, College of Chemistry and Molecular Engineering, Peking University, Beijing　100871

Received Date: 23 December 2003
Available Online: 15 June 2004

The effects of sulfite on the etching processes of silicon and silica in 40％(w) NH4F aqueous solution have been studied by a method based on photolithography and atomic force microscopy (AFM). It is demonstrated that the silicon and silica etching rates depend on the sulfite concentrations. The spectra of the F 1s core level in the high-resolution X-ray photoelectron spectroscopy (XPS) for surfaces treated in solutions with/without sulfite suggest the chemistry of the surfaces is different in the two cases. The experimental results indicate that sulfite not only acts as an oxygen scavenger, but also influences the surface reactions in the wetting etching of Si and SiO2.
- Silicon;Silica;Etching rate;Ammonium fluoride;Ammonium sulfite;　Photolithography
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