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Citation: Wang Wei-Jiang, Wang Jiang-Tao, Jin Cheng-He, Lu Shou-Yun. Photoelectrochemical Microetching of n-GaAs[J]. Acta Physico-Chimica Sinica, ;1993, 9(03): 386-391. doi: 10.3866/PKU.WHXB19930318 shu

Photoelectrochemical Microetching of n-GaAs

1.
Department of Chemistry, Fudan University, Shanghai 200433

Received Date: 8 January 1992
Available Online: 15 June 1993

Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was inven-stigated. An etched pattern was scribed on the n-GaAs surface while the sample moved in X-Y two directions by means of two motors controlled by microcomputer. The diameter of the etched holes was 2 μm. The intensity of the laser light, the concen-trations of different etchants, such as KOH, _2SO_4, HCl and KCl etc., the etching time, the electrode potentials effected the diameters and depths of the etched holes. The experiment results were discussed and analyzed in this paper.
- Photoelectrochemical etching; Microetching of semiconductor; Photoassisted microetching; Non-mask etch of n-GaAs
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