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Citation: Qian Dao-Sun, Cai Dong-Chen, Shen Tian-Jing. A Study of the Transient Ring Currents of the Rrde As n-InP Disc Irradiated with a Light Step[J]. Acta Physico-Chimica Sinica, ;1990, 6(05): 638-640. doi: 10.3866/PKU.WHXB19900524 shu

A Study of the Transient Ring Currents of the Rrde As n-InP Disc Irradiated with a Light Step

1.
Department of Applied Chemistry, Shanghai Jiaotong University

Received Date: 15 November 1989
Available Online: 15 October 1990

The transient ring currents of the RRDE n-InP semiconductor disk- ld ring irradiated with a light step from dark to 25 mW·cm~(-2) with the seven different rota-tion speeds between 590 and 7000 r. p. m. in 0.101 mol·L~(-1) K_4 Fe(CN)_6 have been studied Experimental data were fitted by the computer. The diffusion coefficient of [Fe(CN)_6]~(3-) ion found is D=3.3×10~(-6) em~2·s~(-1) and the theoratical collection efficiency calculated for thin-gap and thin-ring RRDE is N=0.20 these are in od agreement with the literature. The experimental value of ωτ_0 agree with the theoratical value.
The agreement between the experiment and the theory suggests that the electrode reaction on n-InP is a simple photoelectro-chemical reaction, i.e.
[Fe(CN)_6]~(4-)+h~+→[Fe(CO)_6]~(3-).
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