Citation: Xiao-yi Sun, Jin-yu Li, Hui Liu, Ping Lu. Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers[J]. Acta Polymerica Sinica, ;2018, (2): 284-294. doi: 10.11777/j.issn1000-3304.2018.17247 shu

Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers

State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012

Corresponding author: Ping Lu, lup@jlu.edu.cn
Received Date: 31 August 2017
Revised Date: 22 September 2017

The development of deep-blue light-emitting materials is of vital importance in organic light emitting diodes (OLEDs). Deep blue emission can efficiently reduce the power consumption in full-color displays. In this study, aiming at developing solution-processable materials for low-cost OLEDs, a series of wide bandgap polymers using tetraphenylsilane as the main chain and phenanthro[9, 10-d] imidazole (PPI) as the side chain were designed and successfully synthesized via Suzuki coupling reactions. The silane group provides the polymers with wide bandgaps, and PPI unit entitles the polymers with high quantum efficiencies. All the polymers show good solubility in common organic solvents even without long alkyl chains. The emission spectra are all located in deep-blue region in THF peaking at 421 nm. P1 , P2 and P4 show high quantum efficiencies of 82.3%-99.6% in THF. P3 exhibits a relatively low efficiency of 34.0% due to the intramolecular interactions caused by the dibenzo[b, d]thiophene-5, 5-dioxide in the mainchain. And only a few red-shifts in emission spectra are observed in the solid state. They also possess high thermal stability, good morphological stability and appropriate highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels. AFM characterization presents that the spin-coating film of the polymers display fairly homogenous and smooth surface morphology with the root mean square roughness of 0.57-0.71 nm. The non-doped solution-processed devices are fabricated with a configuration of ITO/PEDOT:PSS (40 nm)/EML (20 nm)/TPBi (30 nm)/LiF (1.2 nm)/Al (120 nm). Among them, the device using P1 as emissive layer shows the best performance with a relatively high external quantum efficiency of 0.65% and deep blue CIE coordinates of (0.163, 0.099). The maximum peak of EL emission was at 420 nm with narrow full width at half maximum (FWHM). All of these results gives us a new foreground for the design of deep-blue light-emitting polymers and inspire its application in the future.
- Polymer light-emitting diodes,
- Deep-blue,
- Wide bandgap,
- Phenanthro[9, 10-d]imidazole,
- Tetraphenylsilane
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