Citation: Zhong Wen-kai, Xie Rui-hao, Ying Lei, Huang Fei, Cao Yong. High Performance Polymer Photodetectors Enabled by a Naphtho[1, 2-c: 5, 6-c']bis([1, 2, 5]thiadiazole) Based π-Conjugated Polymer[J]. Acta Polymerica Sinica, ;2018, (2): 217-222. doi: 10.11777/j.issn1000-3304.2018.17242 shu

High Performance Polymer Photodetectors Enabled by a Naphtho[1, 2-c: 5, 6-c']bis([1, 2, 5]thiadiazole) Based π-Conjugated Polymer

  • Naphtho[1, 2-c:5, 6-c']bis([1, 2, 5]thiadiazole) (NT) unit with centro-symmetric and enlarged planar π-conjugated structure is one of the most promising electron-withdrawing moieties for the construction of high-performance conjugated polymers for solar cells and organic field-effect transistors. Recently, an NT based narrow-bandgap conjugated polymer (NTOD), consisting of NT as the electron-withdrawing unit and 2, 5-bis(3-alkylthiophen-2-yl)thieno[3, 2-b]thiophene as the electron-donating unit, has been developed, which exhibited a remarkable power conversion efficiency exceeding 10% and might be used to construct device with thick active layer over 300 nm. Considering the impressive photovoltaic performances achieved based on the NT-polymers, here we designed and fabricated solution-processed polymer photodetectors using NTOD as the electron donor. Device with architecture of ITO/PEDOT:PSS/active layer/Al was fabricated to investigate the performance of the photodetector. The active layer was comprised of NTOD as the electron donor and a fullerene derivative of (6, 6)-phenyl-C71-butyric acid methyl ester (PC71BM) as the electron acceptor, which displayed broad absorption spectra ranging from 400 nm to 830 nm. We noted that the dark current density of the photodetectors was effectively suppressed by increasing the thickness of the NTOD:PC71BM based active layer, while the external quantum efficiency (EQE) of the devices maintained relatively high. It is also worth pointing out that, when the thickness of the active layer increased up to 385 nm, the device exhibited low dark current density of 6.69×10-10 A cm-2 at -0.1 V, for which the specific detectivity (D*) is higher than 1013 cm Hz1/2 W-1 in the range of 440-800 nm, with champion detectivity of 1.50×1013 cm Hz1/2 W-1 and responsivity of 0.22 A W-1 at 750 nm. Moreover, the polymer photodetector exhibited a high detectivity of 1.10×1013 cm Hz1/2 W-1 at 800 nm, suggesting the good detectivity extending to near-infrared (NIR) region. These results indicate that the NTOD polymer has great potential for the construction of high performance polymer photodetectors.
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