Citation: Xiaoqing Wu, Yajie Chen, Dagui Wang, Song Pu, Qiujiao Du, Pengcheng Gao. Balancing switching and transient response for ion gating in field-effect nanofluidic transistors[J]. Chinese Chemical Letters, ;2026, 37(1): 111623. doi: 10.1016/j.cclet.2025.111623 shu

Balancing switching and transient response for ion gating in field-effect nanofluidic transistors

Xiaoqing Wu ^a ,
Yajie Chen ^a ,
Dagui Wang ^{b, c} ,
Song Pu ^a ,
Qiujiao Du ^d ,
Pengcheng Gao ^{a, *,}

a.
Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
b.
Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
c.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
d.
School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China

pcgao@cug.edu.cn

Received Date: 14 April 2025
Revised Date: 16 July 2025
Accepted Date: 22 July 2025
Available Online: 23 July 2025

Figures(4)

Field-effect nanofluidic transistors (FENTs), biomimicking the structure and functionality of neuron, act as biological transistors with the ability to gate switching responses to external stimuli. The switching ratio has been verified to evaluate the performance of FENTs, but until recently, the response time, another crucial indicator, has been ignored. Employing finite-element method, we investigated the relationship among gate charge, switching ratio and response time by divisionally manipulating gate charge, including entrance surface and the surface of confinement space, for ion transport to optimize switching capability. The dual-split gate charge on FENTs exhibits synergistic effect on switching response. Based on the two regional gate charge on FENTs, multivalence ions in lower concentration, high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions. The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.
- Nanofluidic transistor,
- Gate charge,
- Ion transport,
- Switching ratio,
- Response time
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