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Citation: Yanping Qiu, Jiatong Zhang, Linping Li, Yangqin Gao, Ning Li, Lei Ge. MOF-derived g-C3N4/ZnIn2S4 S-scheme heterojunction: interface-engineering enhanced photocatalytic NO conversion[J]. Acta Physico-Chimica Sinica, ;2026, 42(4): 100175. doi: 10.1016/j.actphy.2025.100175 shu

MOF-derived g-C3N4/ZnIn2S4 S-scheme heterojunction: interface-engineering enhanced photocatalytic NO conversion

  • 1.

    State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, Beijing 102249, China

  • 2.

    Dongying Guoan Chemical Co., Ltd, Circular Economy Industrial Park, Lijin County, Dongying 257400, Shandong Province, China

  • Addressing the growing challenge of nitrogen oxides (NOx) pollution in the atmosphere requires the development of photocatalysts with both high efficiency and strong selectivity. In this study, a g-C3N4/ZnIn2S4 (CN/ZIS) S-scheme heterojunction photocatalyst was constructed, in which ZnIn2S4 with a hollow tubular morphology was synthesized via a MOF-derived strategy, and g-C3N4 served as an efficient electron transfer platform. The optimized CN/ZIS-0.1 exhibited remarkable photocatalytic efficacy under visible-light radiation, attaining a NO removal efficiency of 67.29%, markedly surpassing that of pristine g-C3N4 (41.41%) and ZIS (27.8%). Additionally, a high NO-to-nitrate selectivity of 77.47% was attained, exceeding that of pristine g-C3N4 (49.01%). The material characterization results revealed that CN/ZIS-0.1 not only has a wider light absorption range but also its unique structure provides more reaction sites. Further photoelectrochemical measurements and DFT simulations confirm that the built-in electric field (BIEF) formed at the CN/ZIS interface facilitates the directional migration of photogenerated electrons towards the g-C3N4 surface, and photogenerated holes migrate towards the surface of ZIS, thereby promoting the generation of key reactive species and enhancing NO adsorption. This work not only demonstrates the potential of constructing S-scheme heterojunctions by coupling MOF-derived hollow structures with two-dimensional semiconductors for NO oxidation, but also offers an effective strategy for developing highly selective NO photocatalysts.
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